Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Characteristics | Typical Dark Current | Package | Sensitive Area (µmɸ) | Typology |
|---|---|---|---|---|---|---|
|
KPDE008-S Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Cap Isolated 2-pin Mini Can InGaAs PD |
Characteristics
Mini can
|
Typical Dark Current
160pA (max) @ 5V
|
Package
Mini can
|
Sensitive Area (µmɸ)
80
|
Typology
InGaAs Photodiodes
|
|
KPDE020-S Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Cap Isolated 2-pin Mini Can InGaAs PD |
Characteristics
Mini can
|
Typical Dark Current
400pA (max) @ 5V
|
Package
Mini can
|
Sensitive Area (µmɸ)
200
|
Typology
InGaAs Photodiodes
|
|
KPDE030-S Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Cap Isolated 2-pin Mini Can InGaAs PD |
Characteristics
Mini can
|
Typical Dark Current
600pA (max) @ 5V
|
Package
Mini can
|
Sensitive Area (µmɸ)
300
|
Typology
InGaAs Photodiodes
|
|
KPDE10GC-V2 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, 10Gbps InGaAs photodiode |
Characteristics
High speed
|
Typical Dark Current
10pA @ 5V
|
Package
Chip
|
Sensitive Area (µmɸ)
28
|
Typology
InGaAs Photodiodes
|
|
KPEIMC-100 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Characteristics
Edge illuminated
|
Typical Dark Current
35pA @ 5V
|
Package
Chip
|
Sensitive Area (µmɸ)
80x100
|
Typology
InGaAs Photodiodes
|
|
KPEIMC-UDCOM Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Characteristics
Edge illuminated
|
Typical Dark Current
50pA @ 5V
|
Package
Chip
|
Sensitive Area (µmɸ)
100x120
|
Typology
InGaAs Photodiodes
|
|
KPID150HC Kyosemi, Optical Communication Devices, Si High Speed & High Responsivity Photodiode |
Characteristics
Si high speed
|
Typical Dark Current
0.8nA @ 10V
|
Package
Chip
|
Sensitive Area (µmɸ)
1500
|
Typology
Si PIN Photodiodes
|
|
Discontinued
|
KPDE005HAn Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Characteristics
Array
|
Typical Dark Current
30pA @ 5V
|
Package
Chip
|
Sensitive Area (µmɸ)
50
|
Typology
InGaAs Photodiodes
|
|
Discontinued
|
KPDEH16C Optical Communication Devices, InGaAs Photodiodes, 25GHz InGaAs photodiode |
Characteristics
High speed
|
Typical Dark Current
0.5nA @ 2V
|
Package
Chip
|
Sensitive Area (µmɸ)
16
|
Typology
InGaAs Photodiodes
|
|
Discontinued
|
KPDEH16DC Optical Communication Devices, InGaAs Photodiodes, 25GHz InGaAs photodiode |
Characteristics
High speed
|
Typical Dark Current
0.5nA @ 2V
|
Package
Chip
|
Sensitive Area (µmɸ)
16
|
Typology
InGaAs Photodiodes
|