Fotodiodi - Fototransistor
Fotodiodi - Fototransistor
| Prodotto | Descrizione | Half Angle (deg) | Package | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (µA) | Short circuit current (lx) | Tipologia | Bit Rate (bps) | Caratteristiche | Sensibilità Ottica (dBm), Typ. |
|---|---|---|---|---|---|---|---|---|---|---|---|
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KPD301M4X Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
150
|
Package
Side view, plastic mold
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
2.59 x 2.59
|
Short circuit current (µA)
78
|
Short circuit current (lx)
1000
|
Tipologia
Silicon Photodiodes
|
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KPGX2GK-LR33S Kyosemi, Optical Communication Devices, 2.5Gbps and 4Gbps GaAs PD-TIA Receivers for 850nm Gigabit Ethernet and Fiber Channel |
Package
LC-ROSA
|
Tipologia
GaAs PD-TIA Receivers
|
Bit Rate (bps)
2.5G
|
Caratteristiche
GaAs PD-TIA
|
Sensibilità Ottica (dBm), Typ.
-20 @ 3.3V
|
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KPGX4G-LR33S Kyosemi, Optical Communication Devices, 2.5Gbps and 4Gbps GaAs PD-TIA Receivers for 850nm Gigabit Ethernet and Fiber Channel |
Package
LC-ROSA
|
Tipologia
GaAs PD-TIA Receivers
|
Bit Rate (bps)
4G
|
Caratteristiche
GaAs PD-TIA
|
Sensibilità Ottica (dBm), Typ.
-17 @ 3.3V
|