Sensori optoelettronici
Sensori optoelettronici
| Prodotto | Descrizione | Half Angle (deg) | Package | Peak sens. wavelenght (nm) | Responsività (mA/W) @λ(nm) | Sensitive Area (mm) | Tipologia | Chip Material | Lunghezza D'onda (nm) | Potenza di Uscita @If(mA) | Potenza di Uscita (mW) | Short circuit current (µA) | Short circuit current (lx) | Sensitive Area (µmɸ) | Sensitive Wavelenght (nm) | Short circuit current (mA/W) @λ(nm) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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KDA16S Photodevices for Sensors - Detectors, Silicon Photodiode Array & Position sensing detector (PSD), Kyosemi |
Half Angle (deg)
-
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Package
Surface mount
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Peak sens. wavelenght (nm)
900
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Responsività (mA/W) @λ(nm)
540 @ 850
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Sensitive Area (mm)
0.74 x 2.0 (per 1ch)
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Tipologia
Silicon Photodiode Array & Position sensing detector (PSD)
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KED050CX-T Kyosemi, Photodevices for Sensors - Emitters, Point Source LED, Infrared LED Pigtail |
Half Angle (deg)
-
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Package
Pigtail
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Tipologia
Point Source LEDs
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Chip Material
GaAIAs
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Lunghezza D'onda (nm)
850
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Potenza di Uscita @If(mA)
50
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Potenza di Uscita (mW)
-16(dBm)
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KPD31S Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
-
|
Package
Surface mount
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
2.80 x 0.80
|
Tipologia
Silicon Photodiodes
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Short circuit current (µA)
22
|
Short circuit current (lx)
1000
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KPD3212 Photodevices for Sensors - Detectors, Silicon Photodiode Array & Position sensing detector (PSD), Kyosemi |
Half Angle (deg)
-
|
Package
Surface mount
|
Peak sens. wavelenght (nm)
950
|
Responsività (mA/W) @λ(nm)
16(µA) @ 1000 lx
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Sensitive Area (mm)
1.5 x 1.0 (per 1ch)
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Tipologia
Silicon Photodiode Array & Position sensing detector (PSD)
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KPDE086S-H85P Photodevices for Sensors - Detectors, Thermoelectrically Cooled InGaAs-InAs Photodiodes, Kyosemi |
Half Angle (deg)
-
|
Package
TO-46, hermetic seal, TE cooler
|
Peak sens. wavelenght (nm)
1600
|
Responsività (mA/W) @λ(nm)
1000 @ 1550
|
Sensitive Area (mm)
0.86 x 0.86
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Tipologia
Thermoelectrically Cooled InGaAs-InAs Photodiodes
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KPDE150 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
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Responsività (mA/W) @λ(nm)
1.0 @ 1550
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Tipologia
InGaAs NIR Photodiodes
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Sensitive Area (µmɸ)
1500
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Sensitive Wavelenght (nm)
900 - 1700
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KPDU400F-2 Photodevices for Sensors - Detectors, Silicon UV Sensors, Kyosemi |
Half Angle (deg)
70
|
Package
TO-5, hermetic seal
|
Peak sens. wavelenght (nm)
254
|
Sensitive Area (mm)
4 x 4
|
Tipologia
Silicon UV Sensors
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Short circuit current (mA/W) @λ(nm)
30 @ 254
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KPDU400QW-2 Photodevices for Sensors - Detectors, Silicon UV Sensors, Kyosemi |
Half Angle (deg)
70
|
Package
TO-5, hermetic seal
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Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
4 x 4
|
Tipologia
Silicon UV Sensors
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Short circuit current (mA/W) @λ(nm)
120 @ 365
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KPDW400H-2 Photodevices for Sensors - Detectors, Silicon UV Sensors, Kyosemi |
Half Angle (deg)
70
|
Package
TO-5, hermetic seal
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
4 x 4
|
Tipologia
Silicon UV Sensors
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Short circuit current (mA/W) @λ(nm)
115 @ 365
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KPID020D-H8 Photodevices for Sensors - Detectors, High Speed Silicon Photodiodes, Kyosemi |
Half Angle (deg)
-
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Package
TO-18, hermetic seal
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Peak sens. wavelenght (nm)
700
|
Responsività (mA/W) @λ(nm)
350 @ 850
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Tipologia
High Speed Silicon Photodiodes
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Sensitive Area (µmɸ)
200
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