LED
LED
| Product | Description | Chip Material | Half Angle (deg) | Wavelength (nm) | Package | Output Power @lf(mA) | Output Power (mW) | Typology |
|---|---|---|---|---|---|---|---|---|
|
KED050CXK Kyosemi, Photodevices for Sensors - Emitters, Point Source LED, Point-source Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
125
|
Wavelength (nm)
850
|
Package
TO-46, epoxy lens
|
Output Power @lf(mA)
50
|
Output Power (mW)
5
|
Typology
Point Source LEDs
|
|
Discontinued
|
KED365US1 Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led |
Chip Material
GaN
|
Half Angle (deg)
100
|
Wavelength (nm)
367
|
Package
Surface mount, ceramic
|
Output Power @lf(mA)
20
|
Output Power (mW)
2.1
|
Typology
Ultra Violet LEDs
|
|
Discontinued
|
KED373US1 Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led, InGaN GaN UV LED |
Chip Material
InGaN
|
Half Angle (deg)
100
|
Wavelength (nm)
373
|
Package
Surface mount, ceramic
|
Output Power @lf(mA)
20
|
Output Power (mW)
1.3
|
Typology
Ultra Violet LEDs
|
|
Discontinued
|
KED405UMS1 Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led, InGaN Violet LED |
Chip Material
InGaN
|
Half Angle (deg)
130
|
Wavelength (nm)
405
|
Package
Surface mount, ceramic
|
Output Power @lf(mA)
20
|
Output Power (mW)
13
|
Typology
Ultra Violet LEDs
|
|
Discontinued
|
KEDE1458K Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED |
Chip Material
InGaAsP
|
Half Angle (deg)
110
|
Wavelength (nm)
1450
|
Package
TO-46, epoxy lens
|
Output Power @lf(mA)
50
|
Output Power (mW)
3
|
Typology
Infrared LEDs
|