LED
LED
| Product | Description | Dimension | Half Angle (deg) | Wavelength | Package | Output Power (mW) | Operating temperature | Typical Direct Voltage (V) | Typology | Chip Material | Wavelength (nm) | Output Power @lf(mA) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NSxxxL-2SVR Nitride Semiconductor - LED UV |
Dimension
2.7 x 2.7 x 2.0
|
Half Angle (deg)
110
|
Wavelength
360-370 nm
380-390 nm
400-410 nm
|
Package
Surface mount
|
Output Power (mW)
800
930
1000
|
Operating temperature
-10 ~ +85 °C
|
Typical Direct Voltage (V)
3.8
3.6
3.5
|
Typology
Ultra Violet LEDs
|
|||
|
Discontinued
|
KED080DXH Kyosemi, Photodevices for Sensors - Emitters, Point Source LED, Point-source Infrared LED |
Half Angle (deg)
110
|
Package
TO-46, hermetic seal
|
Output Power (mW)
1.0
|
Typology
Point Source LEDs
|
Chip Material
GaAIAs
|
Wavelength (nm)
850
|
Output Power @lf(mA)
20
|
||||
|
Discontinued
|
KED602C Kyosemi, Photodevices for Sensors - Emitters, Infrared LED |
Half Angle (deg)
110
|
Package
ϕ3 ceramic, epoxy lens
|
Output Power (mW)
6
|
Typology
Infrared LEDs
|
Chip Material
GaAIAs
|
Wavelength (nm)
890
|
Output Power @lf(mA)
40
|
||||
|
Discontinued
|
KEDE1458K Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED |
Half Angle (deg)
110
|
Package
TO-46, epoxy lens
|
Output Power (mW)
3
|
Typology
Infrared LEDs
|
Chip Material
InGaAsP
|
Wavelength (nm)
1450
|
Output Power @lf(mA)
50
|