LED
LED
| Product | Description | Dimension | Half Angle (deg) | Wavelength | Package | Output Power (mW) | Operating temperature | Typical Direct Voltage (V) | Typology | Chip Material | Wavelength (nm) | Output Power @lf(mA) | Colour | Resin colour | External Diameter | Light intensity (mcd) | Max Direct Voltage (V) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NS275L-6DFG Nitride Semiconductor - Deep UV LED |
Dimension
6.3 x 6.3 x 1.8
|
Half Angle (deg)
120
|
Wavelength
270-280 nm
|
Package
Surface mount
|
Output Power (mW)
19
|
Operating temperature
-30 ~ +60 °C
|
Typical Direct Voltage (V)
7.0
|
Typology
Ultra Violet LEDs
|
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NSxxxL-3SVR Nitride Semiconductor - LED UV |
Dimension
3.5 x 3.5 x 2.0
|
Half Angle (deg)
120
|
Wavelength
380-390 nm
390-400 nm
400-410 nm
|
Package
Surface mount
|
Output Power (mW)
1200
1100
|
Operating temperature
-10 ~ +85 °C
|
Typical Direct Voltage (V)
3.6
3.5
|
Typology
Ultra Violet LEDs
|
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KED308HQ Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs Parallel Beam Infrared LED |
Half Angle (deg)
12
|
Package
TO-46, hermetic seal
|
Output Power (mW)
12
|
Typology
Parallel Beam LEds
|
Chip Material
GaAIAs
|
Wavelength (nm)
870
|
Output Power @lf(mA)
50
|
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KED351HDL Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED |
Half Angle (deg)
12
|
Package
TO-18, hermetic seal
|
Output Power (mW)
4
|
Typology
Infrared LEDs
|
Chip Material
GaAIAs
|
Wavelength (nm)
870
|
Output Power @lf(mA)
20
|
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KED372UH Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led, InGaN Ultraviolet LED |
Half Angle (deg)
12
|
Package
TO-18, hermetic seal
|
Output Power (mW)
1.5
|
Typology
Ultra Violet LEDs
|
Chip Material
InGaN
|
Wavelength (nm)
373
|
Output Power @lf(mA)
20
|
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KED372UHB Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led, InGaN Ultraviolet LED |
Half Angle (deg)
12
|
Package
TO-18, hermetic seal
|
Output Power (mW)
7.2
|
Typology
Ultra Violet LEDs
|
Chip Material
InGaN
|
Wavelength (nm)
378
|
Output Power @lf(mA)
20
|
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|
Discontinued
|
KED501H Kyosemi, Photodevices for Sensors - Emitters, Gas Infrared LED |
Half Angle (deg)
12
|
Package
TO-18, hermetic seal
|
Output Power (mW)
7.2
|
Typology
Infrared LEDs
|
Chip Material
GaAs
|
Wavelength (nm)
950
|
Output Power @lf(mA)
100
|
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|
Discontinued
|
KED511H Kyosemi, Photodevices for Sensors - Emitters, Gas Infrared LED |
Half Angle (deg)
12
|
Package
TO-18, hermetic seal
|
Output Power (mW)
7.2
|
Typology
Infrared LEDs
|
Chip Material
GaAs
|
Wavelength (nm)
950
|
Output Power @lf(mA)
100
|
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|
Discontinued
|
KED614M31 Kyosemi, Photodevices for Sensors - Emitters, Plastic Mold LEDs for sensors, Orange color, Kyosemi Photodevices for sensors |
Half Angle (deg)
12
|
Package
M31
|
Output Power (mW)
3
|
Typology
Plastic Mold LEDs for Sensors
|
Chip Material
AIGaInP
|
Wavelength (nm)
615
|
Output Power @lf(mA)
20
|
Colour
Orange
|
Resin colour
Clear
|
External Diameter
⌀3
|
Light intensity (mcd)
2100
|
Max Direct Voltage (V)
2.4
|