LED
LED
| Product | Description | Chip Material | Half Angle (deg) | Wavelength (nm) | Package | Output Power @lf(mA) | Output Power (mW) | Typology |
|---|---|---|---|---|---|---|---|---|
|
KED351RKD Kyosemi, Photodevices for Sensors - Emitters, GaAIAs Red LED |
Chip Material
GaAIAs
|
Half Angle (deg)
32
|
Wavelength (nm)
660
|
Package
TO-18, epoxy lens
|
Output Power @lf(mA)
20
|
Output Power (mW)
3.6
|
Typology
Red LEDs
|
|
KED353KDL Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
42
|
Wavelength (nm)
870
|
Package
TO-18, epoxy lens
|
Output Power @lf(mA)
20
|
Output Power (mW)
6
|
Typology
Infrared LEDs
|
|
KED602K Kyosemi, Photodevices for Sensors - Emitters, Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
45
|
Wavelength (nm)
890
|
Package
TO-18, epoxy lens
|
Output Power @lf(mA)
50
|
Output Power (mW)
15
|
Typology
Infrared LEDs
|
|
Discontinued
|
KED503K Kyosemi, Photodevices for Sensors - Emitters, Infrared LED |
Chip Material
GaAs
|
Half Angle (deg)
75
|
Wavelength (nm)
950
|
Package
TO-18, epoxy lens
|
Output Power @lf(mA)
50
|
Output Power (mW)
10
|
Typology
Infrared LEDs
|