LED
LED
| Product | Description | Chip Material | Half Angle (deg) | Wavelength (nm) | Package | Output Power @lf(mA) | Output Power (mW) | Typology |
|---|---|---|---|---|---|---|---|---|
|
KED351HDL Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
12
|
Wavelength (nm)
870
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
4
|
Typology
Infrared LEDs
|
|
KED353KDL Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
42
|
Wavelength (nm)
870
|
Package
TO-18, epoxy lens
|
Output Power @lf(mA)
20
|
Output Power (mW)
6
|
Typology
Infrared LEDs
|
|
KED601H Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
14
|
Wavelength (nm)
890
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
100
|
Output Power (mW)
9
|
Typology
Infrared LEDs
|
|
KED602K Kyosemi, Photodevices for Sensors - Emitters, Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
45
|
Wavelength (nm)
890
|
Package
TO-18, epoxy lens
|
Output Power @lf(mA)
50
|
Output Power (mW)
15
|
Typology
Infrared LEDs
|
|
|
KED604H Kyosemi, Photodevices for Sensors - Emitters, Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
60
|
Wavelength (nm)
890
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
100
|
Output Power (mW)
11
|
Typology
Infrared LEDs
|
|
KEDE1304H Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED |
Chip Material
InGaAsP
|
Half Angle (deg)
80
|
Wavelength (nm)
1300
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
2.5
|
Typology
Infrared LEDs
|
|
KEDE1452H Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED |
Chip Material
InGaAsP
|
Half Angle (deg)
20
|
Wavelength (nm)
1450
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
2.8
|
Typology
Infrared LEDs
|
|
KEDE1454H Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED |
Chip Material
InGaAsP
|
Half Angle (deg)
80
|
Wavelength (nm)
1450
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
2.5
|
Typology
Infrared LEDs
|
|
KEDE1552H Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED |
Chip Material
InGaAsP
|
Half Angle (deg)
20
|
Wavelength (nm)
1550
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
1.8
|
Typology
Infrared LEDs
|
|
KEDE1652H Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED |
Chip Material
InGaAsP
|
Half Angle (deg)
20
|
Wavelength (nm)
1650
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
2
|
Typology
Infrared LEDs
|