Photodiodes - Phototransistors
Photodiodes - Phototransistors
| Product | Description | Package | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (µA) | Typology | Half Angle (deg) | Bit Rate (bps) | Characteristics |
|---|---|---|---|---|---|---|---|---|---|
|
KPD31S Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Package
Surface mount
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
2.80 x 0.80
|
Short circuit current (µA)
22
|
Typology
Silicon Photodiodes
|
|||
|
KPD1201H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
880
|
Sensitive Area (mm)
0.92 x 0.92
|
Short circuit current (µA)
60
|
Typology
Silicon Photodiodes
|
Half Angle (deg)
23
|
||
|
|
KPD1203H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
880
|
Sensitive Area (mm)
0.92 x 0.92
|
Short circuit current (µA)
8
|
Typology
Silicon Photodiodes
|
Half Angle (deg)
100
|
||
|
KPD1203K Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Package
TO-18, epoxy lens
|
Peak sens. wavelenght (nm)
880
|
Sensitive Area (mm)
0.92 x 0.92
|
Short circuit current (µA)
11
|
Typology
Silicon Photodiodes
|
Half Angle (deg)
140
|
||
|
|
KPD1801H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
840
|
Sensitive Area (mm)
1.30 x 1.60
|
Short circuit current (µA)
70
|
Typology
Silicon Photodiodes
|
Half Angle (deg)
34
|
||
|
KPD1803H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
840
|
Sensitive Area (mm)
1.30 x 1.60
|
Short circuit current (µA)
17
|
Typology
Silicon Photodiodes
|
Half Angle (deg)
95
|
||
|
|
KPD1803K Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Package
TO-18, epoxy lens
|
Peak sens. wavelenght (nm)
840
|
Sensitive Area (mm)
1.30 x 1.60
|
Short circuit current (µA)
24
|
Typology
Silicon Photodiodes
|
Half Angle (deg)
120
|
||
|
|
KPD301M4X Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Package
Side view, plastic mold
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
2.59 x 2.59
|
Short circuit current (µA)
78
|
Typology
Silicon Photodiodes
|
Half Angle (deg)
150
|
||
|
KPD30S Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Package
Surface mount
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
2.59 x 2.59
|
Short circuit current (µA)
68
|
Typology
Silicon Photodiodes
|
Half Angle (deg)
120
|
||
|
KPDX10G-XMD Kyosemi, Optical Communication Devices, InGaAs PD-TIA Receivers, XMD 10Gbps PIN-TIA Receiver |
Package
InGaAs ROSA with FPC (Flexible-Printed Circuit)
|
Typology
InGaAs PD-TIA Receivers
|
Bit Rate (bps)
10G
|
Characteristics
ROSA
|