Photodiodes - Phototransistors
Photodiodes - Phototransistors
| Product | Description | Package | Responsivity (mA/W) @λ(nm) | Sensitive Area (µmɸ) | Sensitive Wavelenght (nm) | Typology | Amplification factor | Peak sens. wavelenght (nm) |
|---|---|---|---|---|---|---|---|---|
|
KPDE150 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Responsivity (mA/W) @λ(nm)
1.0 @ 1550
|
Sensitive Area (µmɸ)
1500
|
Sensitive Wavelenght (nm)
900 - 1700
|
Typology
InGaAs NIR Photodiodes
|
||
|
KPDA020P-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes |
Package
TO-18, hermetic seal
|
Responsivity (mA/W) @λ(nm)
450 @ 850
|
Sensitive Area (µmɸ)
200
|
Typology
Silicon Avalanche Photodiodes
|
Amplification factor
150
|
Peak sens. wavelenght (nm)
780
|
|
|
KPDA050P-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes |
Package
TO-18, hermetic seal
|
Responsivity (mA/W) @λ(nm)
450 @ 850
|
Sensitive Area (µmɸ)
500
|
Typology
Silicon Avalanche Photodiodes
|
Amplification factor
150
|
Peak sens. wavelenght (nm)
780
|
|
|
KPDA100P-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes |
Package
TO-18, hermetic seal
|
Responsivity (mA/W) @λ(nm)
450 @ 850
|
Sensitive Area (µmɸ)
1000
|
Typology
Silicon Avalanche Photodiodes
|
Amplification factor
150
|
Peak sens. wavelenght (nm)
780
|
|
|
KPDF030F22-H8 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Responsivity (mA/W) @λ(nm)
1.2 @ 1950
|
Sensitive Area (µmɸ)
300
|
Sensitive Wavelenght (nm)
1200 - 2300
|
Typology
InGaAs NIR Photodiodes
|
||
|
KPDF030F26-H8 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Responsivity (mA/W) @λ(nm)
1.2 @ 2200
|
Sensitive Area (µmɸ)
300
|
Sensitive Wavelenght (nm)
1200 - 2700
|
Typology
InGaAs NIR Photodiodes
|
||
|
Discontinued
|
KPDA020-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes |
Package
TO-18, hermetic seal
|
Responsivity (mA/W) @λ(nm)
350 @ 800
|
Sensitive Area (µmɸ)
200
|
Typology
Silicon Avalanche Photodiodes
|
Amplification factor
150
|
Peak sens. wavelenght (nm)
670
|
|
|
Discontinued
|
KPDA050-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes |
Package
TO-18, hermetic seal
|
Responsivity (mA/W) @λ(nm)
350 @ 800
|
Sensitive Area (µmɸ)
500
|
Typology
Silicon Avalanche Photodiodes
|
Amplification factor
150
|
Peak sens. wavelenght (nm)
670
|
|
|
Discontinued
|
KPDA100-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes |
Package
TO-18, hermetic seal
|
Responsivity (mA/W) @λ(nm)
350 @ 660
|
Sensitive Area (µmɸ)
1000
|
Typology
Silicon Avalanche Photodiodes
|
Amplification factor
150
|
Peak sens. wavelenght (nm)
670
|
|
|
Discontinued
|
KPDE030 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
Hermetic sealed, Pigtail
|
Responsivity (mA/W) @λ(nm)
1.0 @ 1550
|
Sensitive Area (µmɸ)
300
|
Sensitive Wavelenght (nm)
900 - 1700
|
Typology
InGaAs NIR Photodiodes
|