Photodiodes - Phototransistors
Photodiodes - Phototransistors
| Product | Description | Half Angle (deg) | Package | Peak sens. wavelenght (nm) | Photo Current Vce = 5 V | Sensitive Area (mm) | Typology |
|---|---|---|---|---|---|---|---|
|
Discontinued
|
KPT081M31 Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi |
Half Angle (deg)
60
|
Package
ϕ3 plastic mold
|
Peak sens. wavelenght (nm)
800
|
Photo Current Vce = 5 V
7 (mA) 1000 (lx)
|
Sensitive Area (mm)
0.64 x 0.64
|
Typology
Silicon Phototransistors
|
|
Discontinued
|
KPT081M32 Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi |
Half Angle (deg)
90
|
Package
ϕ3 plastic mold
|
Peak sens. wavelenght (nm)
800
|
Photo Current Vce = 5 V
4 (mA) 1000 (lx)
|
Sensitive Area (mm)
0.64 x 0.64
|
Typology
Silicon Phototransistors
|
|
Discontinued
|
KPT801C Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi |
Half Angle (deg)
120
|
Package
ϕ3 ceramic, epoxy lens
|
Peak sens. wavelenght (nm)
800
|
Photo Current Vce = 5 V
4 (mA) 1000 (lx)
|
Sensitive Area (mm)
0.64 x 0.64
|
Typology
Silicon Phototransistors
|
|
Discontinued
|
KPT801H Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi |
Half Angle (deg)
17
|
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
800
|
Photo Current Vce = 5 V
2 (mA) 100 (lx)
|
Sensitive Area (mm)
0.64 x 0.64
|
Typology
Silicon Phototransistors
|
|
Discontinued
|
KPT801HB Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi |
Half Angle (deg)
17
|
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
800
|
Photo Current Vce = 5 V
3 (mA) 100 (lx)
|
Sensitive Area (mm)
0.64 x 0.64
|
Typology
Silicon Phototransistors
|
|
Discontinued
|
KPT811H Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi |
Half Angle (deg)
17
|
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
800
|
Photo Current Vce = 5 V
2 (mA) 100 (lx)
|
Sensitive Area (mm)
0.64 x 0.64
|
Typology
Silicon Phototransistors
|