Photodiodes - Phototransistors
Photodiodes - Phototransistors
| Product | Description | Half Angle (deg) | Package | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (µA) | Typology | Photo Current Vce = 5 V |
|---|---|---|---|---|---|---|---|---|
|
Discontinued
|
KPD104M51 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
40
|
Package
ϕ5 plastic mold
|
Peak sens. wavelenght (nm)
850
|
Sensitive Area (mm)
0.81 x 0.81
|
Short circuit current (µA)
55
|
Typology
Silicon Photodiodes
|
|
|
Discontinued
|
KPT801H Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi |
Half Angle (deg)
17
|
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
800
|
Sensitive Area (mm)
0.64 x 0.64
|
Typology
Silicon Phototransistors
|
Photo Current Vce = 5 V
2 (mA) 100 (lx)
|
|
|
Discontinued
|
KPT801HB Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi |
Half Angle (deg)
17
|
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
800
|
Sensitive Area (mm)
0.64 x 0.64
|
Typology
Silicon Phototransistors
|
Photo Current Vce = 5 V
3 (mA) 100 (lx)
|
|
|
Discontinued
|
KPT811H Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi |
Half Angle (deg)
17
|
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
800
|
Sensitive Area (mm)
0.64 x 0.64
|
Typology
Silicon Phototransistors
|
Photo Current Vce = 5 V
2 (mA) 100 (lx)
|