Photodiodes - Phototransistors
Photodiodes - Phototransistors
| Product | Description | Amplification factor | Package | Peak sens. wavelenght (nm) | Responsivity (mA/W) @λ(nm) | Sensitive Area (µmɸ) | Typology | Half Angle (deg) | Photo Current Vce = 5 V | Sensitive Area (mm) |
|---|---|---|---|---|---|---|---|---|---|---|
|
KPDA020P-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes |
Amplification factor
150
|
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
780
|
Responsivity (mA/W) @λ(nm)
450 @ 850
|
Sensitive Area (µmɸ)
200
|
Typology
Silicon Avalanche Photodiodes
|
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|
KPDA050P-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes |
Amplification factor
150
|
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
780
|
Responsivity (mA/W) @λ(nm)
450 @ 850
|
Sensitive Area (µmɸ)
500
|
Typology
Silicon Avalanche Photodiodes
|
|||
|
KPDA100P-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes |
Amplification factor
150
|
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
780
|
Responsivity (mA/W) @λ(nm)
450 @ 850
|
Sensitive Area (µmɸ)
1000
|
Typology
Silicon Avalanche Photodiodes
|
|||
|
Discontinued
|
KPDA020-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes |
Amplification factor
150
|
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
670
|
Responsivity (mA/W) @λ(nm)
350 @ 800
|
Sensitive Area (µmɸ)
200
|
Typology
Silicon Avalanche Photodiodes
|
|||
|
Discontinued
|
KPDA050-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes |
Amplification factor
150
|
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
670
|
Responsivity (mA/W) @λ(nm)
350 @ 800
|
Sensitive Area (µmɸ)
500
|
Typology
Silicon Avalanche Photodiodes
|
|||
|
Discontinued
|
KPDA100-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes |
Amplification factor
150
|
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
670
|
Responsivity (mA/W) @λ(nm)
350 @ 660
|
Sensitive Area (µmɸ)
1000
|
Typology
Silicon Avalanche Photodiodes
|
|||
|
Discontinued
|
KPT081M31 Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi |
Package
ϕ3 plastic mold
|
Peak sens. wavelenght (nm)
800
|
Typology
Silicon Phototransistors
|
Half Angle (deg)
60
|
Photo Current Vce = 5 V
7 (mA) 1000 (lx)
|
Sensitive Area (mm)
0.64 x 0.64
|
|||
|
Discontinued
|
KPT081M32 Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi |
Package
ϕ3 plastic mold
|
Peak sens. wavelenght (nm)
800
|
Typology
Silicon Phototransistors
|
Half Angle (deg)
90
|
Photo Current Vce = 5 V
4 (mA) 1000 (lx)
|
Sensitive Area (mm)
0.64 x 0.64
|
|||
|
Discontinued
|
KPT801C Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi |
Package
ϕ3 ceramic, epoxy lens
|
Peak sens. wavelenght (nm)
800
|
Typology
Silicon Phototransistors
|
Half Angle (deg)
120
|
Photo Current Vce = 5 V
4 (mA) 1000 (lx)
|
Sensitive Area (mm)
0.64 x 0.64
|
|||
|
Discontinued
|
KPT801H Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi |
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
800
|
Typology
Silicon Phototransistors
|
Half Angle (deg)
17
|
Photo Current Vce = 5 V
2 (mA) 100 (lx)
|
Sensitive Area (mm)
0.64 x 0.64
|