Photodiodes - Phototransistors
Photodiodes - Phototransistors
| Product | Description | Amplification factor | Package | Peak sens. wavelenght (nm) | Responsivity (mA/W) @λ(nm) | Sensitive Area (µmɸ) | Typology | Characteristics | Typical Dark Current | Sensitive Wavelenght (nm) |
|---|---|---|---|---|---|---|---|---|---|---|
|
KPDA050P-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes |
Amplification factor
150
|
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
780
|
Responsivity (mA/W) @λ(nm)
450 @ 850
|
Sensitive Area (µmɸ)
500
|
Typology
Silicon Avalanche Photodiodes
|
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|
KPDE030-S Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Cap Isolated 2-pin Mini Can InGaAs PD |
Package
Mini can
|
Sensitive Area (µmɸ)
300
|
Typology
InGaAs Photodiodes
|
Characteristics
Mini can
|
Typical Dark Current
600pA (max) @ 5V
|
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|
KPDE030SA-TU Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Package
Mini can pigtail
|
Sensitive Area (µmɸ)
300
|
Typology
InGaAs Photodiodes
|
Characteristics
Mini can pigtail
|
Typical Dark Current
600pA (max) @ 5V
|
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|
KPDF030F22-H8 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Responsivity (mA/W) @λ(nm)
1.2 @ 1950
|
Sensitive Area (µmɸ)
300
|
Typology
InGaAs NIR Photodiodes
|
Sensitive Wavelenght (nm)
1200 - 2300
|
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|
KPDF030F26-H8 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Responsivity (mA/W) @λ(nm)
1.2 @ 2200
|
Sensitive Area (µmɸ)
300
|
Typology
InGaAs NIR Photodiodes
|
Sensitive Wavelenght (nm)
1200 - 2700
|
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|
Discontinued
|
KPDA050-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes |
Amplification factor
150
|
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
670
|
Responsivity (mA/W) @λ(nm)
350 @ 800
|
Sensitive Area (µmɸ)
500
|
Typology
Silicon Avalanche Photodiodes
|
|||
|
Discontinued
|
KPDE030 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
Hermetic sealed, Pigtail
|
Responsivity (mA/W) @λ(nm)
1.0 @ 1550
|
Sensitive Area (µmɸ)
300
|
Typology
InGaAs NIR Photodiodes
|
Sensitive Wavelenght (nm)
900 - 1700
|
||||
|
Discontinued
|
KPDE0301M51 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
ϕ5 plastic mold
|
Responsivity (mA/W) @λ(nm)
0.9 @ 1550
|
Sensitive Area (µmɸ)
300
|
Typology
InGaAs NIR Photodiodes
|
Sensitive Wavelenght (nm)
900 - 1700
|
||||
|
Discontinued
|
KPDE030SL Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Package
Hermetic sealed
|
Sensitive Area (µmɸ)
300
|
Typology
InGaAs Photodiodes
|
Characteristics
L-band
|
Typical Dark Current
100pA @ 5V
|
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|
Discontinued
|
KPDF030F24-H8 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Responsivity (mA/W) @λ(nm)
1.1 @ 2200
|
Sensitive Area (µmɸ)
300
|
Typology
InGaAs NIR Photodiodes
|
Sensitive Wavelenght (nm)
1200 - 2500
|