Photodiodes - Phototransistors
Photodiodes - Phototransistors
| Product | Description | Amplification factor | Package | Peak sens. wavelenght (nm) | Responsivity (mA/W) @λ(nm) | Sensitive Area (µmɸ) | Typology | Characteristics | Typical Dark Current |
|---|---|---|---|---|---|---|---|---|---|
|
KPDA050P-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes |
Amplification factor
150
|
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
780
|
Responsivity (mA/W) @λ(nm)
450 @ 850
|
Sensitive Area (µmɸ)
500
|
Typology
Silicon Avalanche Photodiodes
|
||
|
KPDA100P-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes |
Amplification factor
150
|
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
780
|
Responsivity (mA/W) @λ(nm)
450 @ 850
|
Sensitive Area (µmɸ)
1000
|
Typology
Silicon Avalanche Photodiodes
|
||
|
Discontinued
|
KPDA050-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes |
Amplification factor
150
|
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
670
|
Responsivity (mA/W) @λ(nm)
350 @ 800
|
Sensitive Area (µmɸ)
500
|
Typology
Silicon Avalanche Photodiodes
|
||
|
Discontinued
|
KPDA100-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes |
Amplification factor
150
|
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
670
|
Responsivity (mA/W) @λ(nm)
350 @ 660
|
Sensitive Area (µmɸ)
1000
|
Typology
Silicon Avalanche Photodiodes
|
||
|
Discontinued
|
KPID050D-H8 Photodevices for Sensors - Detectors, High Speed Silicon Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
700
|
Responsivity (mA/W) @λ(nm)
350 @ 850
|
Sensitive Area (µmɸ)
500
|
Typology
High Speed Silicon Photodiodes
|
|||
|
Discontinued
|
KPID050M Kyosemi, Optical Communication Devices, Si PIN Photodiodes, High Speed Photodiode |
Package
Hermetic sealed
|
Sensitive Area (µmɸ)
500
|
Typology
Si PIN Photodiodes
|
Characteristics
Si high speed
|
Typical Dark Current
40pA @ 3V
|