Photodiodes - Phototransistors
Photodiodes - Phototransistors
| Product | Description | Package | Responsivity (mA/W) @λ(nm) | Sensitive Area (µmɸ) | Sensitive Wavelenght (nm) | Typology | Amplification factor | Peak sens. wavelenght (nm) | Characteristics | Typical Dark Current |
|---|---|---|---|---|---|---|---|---|---|---|
|
KPDE150 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Responsivity (mA/W) @λ(nm)
1.0 @ 1550
|
Sensitive Area (µmɸ)
1500
|
Sensitive Wavelenght (nm)
900 - 1700
|
Typology
InGaAs NIR Photodiodes
|
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|
KPDA050P-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes |
Package
TO-18, hermetic seal
|
Responsivity (mA/W) @λ(nm)
450 @ 850
|
Sensitive Area (µmɸ)
500
|
Typology
Silicon Avalanche Photodiodes
|
Amplification factor
150
|
Peak sens. wavelenght (nm)
780
|
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|
KPID150HC Kyosemi, Optical Communication Devices, Si High Speed & High Responsivity Photodiode |
Package
Chip
|
Sensitive Area (µmɸ)
1500
|
Typology
Si PIN Photodiodes
|
Characteristics
Si high speed
|
Typical Dark Current
0.8nA @ 10V
|
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|
Discontinued
|
KPDA050-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes |
Package
TO-18, hermetic seal
|
Responsivity (mA/W) @λ(nm)
350 @ 800
|
Sensitive Area (µmɸ)
500
|
Typology
Silicon Avalanche Photodiodes
|
Amplification factor
150
|
Peak sens. wavelenght (nm)
670
|
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|
Discontinued
|
KPID050D-H8 Photodevices for Sensors - Detectors, High Speed Silicon Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Responsivity (mA/W) @λ(nm)
350 @ 850
|
Sensitive Area (µmɸ)
500
|
Typology
High Speed Silicon Photodiodes
|
Peak sens. wavelenght (nm)
700
|
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|
Discontinued
|
KPID050M Kyosemi, Optical Communication Devices, Si PIN Photodiodes, High Speed Photodiode |
Package
Hermetic sealed
|
Sensitive Area (µmɸ)
500
|
Typology
Si PIN Photodiodes
|
Characteristics
Si high speed
|
Typical Dark Current
40pA @ 3V
|