Photodiodes - Phototransistors
Photodiodes - Phototransistors
| Product | Description | Characteristics | Typical Dark Current | Package | Sensitive Area (µmɸ) | Typology | Amplification factor | Peak sens. wavelenght (nm) | Responsivity (mA/W) @λ(nm) |
|---|---|---|---|---|---|---|---|---|---|
|
KPA4-2N Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Characteristics
Array
|
Typical Dark Current
80pA @ 5V
|
Package
4ch array with 250µm pitch
|
Sensitive Area (µmɸ)
80
|
Typology
InGaAs Photodiodes
|
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|
KPA8-2N Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Characteristics
Array
|
Typical Dark Current
80pA @ 5V
|
Package
8ch array with 250µm pitch
|
Sensitive Area (µmɸ)
80
|
Typology
InGaAs Photodiodes
|
|||
|
KPDA050P-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes |
Package
TO-18, hermetic seal
|
Sensitive Area (µmɸ)
500
|
Typology
Silicon Avalanche Photodiodes
|
Amplification factor
150
|
Peak sens. wavelenght (nm)
780
|
Responsivity (mA/W) @λ(nm)
450 @ 850
|
||
|
KPDE008 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Low Dark Current High Speed Photodiode |
Characteristics
High speed
|
Typical Dark Current
30pA @ 5V
|
Package
Hermetic sealed, Pigtail
|
Sensitive Area (µmɸ)
80
|
Typology
InGaAs Photodiodes
|
|||
|
KPDE008-S Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Cap Isolated 2-pin Mini Can InGaAs PD |
Characteristics
Mini can
|
Typical Dark Current
160pA (max) @ 5V
|
Package
Mini can
|
Sensitive Area (µmɸ)
80
|
Typology
InGaAs Photodiodes
|
|||
|
KPDE008S-TU Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Mini Can InGaAs PD Pigtail |
Characteristics
Mini can pigtail
|
Typical Dark Current
30pA @ 5V
|
Package
Mini can pigtail
|
Sensitive Area (µmɸ)
80
|
Typology
InGaAs Photodiodes
|
|||
|
Discontinued
|
KPDA050-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes |
Package
TO-18, hermetic seal
|
Sensitive Area (µmɸ)
500
|
Typology
Silicon Avalanche Photodiodes
|
Amplification factor
150
|
Peak sens. wavelenght (nm)
670
|
Responsivity (mA/W) @λ(nm)
350 @ 800
|
||
|
Discontinued
|
KPDG008 Kyosemi, Optical Communication Devices, GaAs Photodiodes, GaAs photodiode |
Characteristics
GaAs PD
|
Typical Dark Current
30pA @ 5V
|
Package
Hermetic sealed, Pigtail
|
Sensitive Area (µmɸ)
80
|
Typology
GaAs Photodiodes
|
|||
|
Discontinued
|
KPID050D-H8 Photodevices for Sensors - Detectors, High Speed Silicon Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Sensitive Area (µmɸ)
500
|
Typology
High Speed Silicon Photodiodes
|
Peak sens. wavelenght (nm)
700
|
Responsivity (mA/W) @λ(nm)
350 @ 850
|
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|
Discontinued
|
KPID050M Kyosemi, Optical Communication Devices, Si PIN Photodiodes, High Speed Photodiode |
Characteristics
Si high speed
|
Typical Dark Current
40pA @ 3V
|
Package
Hermetic sealed
|
Sensitive Area (µmɸ)
500
|
Typology
Si PIN Photodiodes
|