Photodiodes - Phototransistors
Photodiodes - Phototransistors
| Product | Description | Half Angle (deg) | Package | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (µA) | Typology | Photo Current Vce = 5 V |
|---|---|---|---|---|---|---|---|---|
|
|
KPD1803K Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
120
|
Package
TO-18, epoxy lens
|
Peak sens. wavelenght (nm)
840
|
Sensitive Area (mm)
1.30 x 1.60
|
Short circuit current (µA)
24
|
Typology
Silicon Photodiodes
|
|
|
KPD30S Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
120
|
Package
Surface mount
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
2.59 x 2.59
|
Short circuit current (µA)
68
|
Typology
Silicon Photodiodes
|
|
|
Discontinued
|
KPD3065C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
120
|
Package
ϕ 6,5 ceramic, epoxy lens
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
2.59 x 2.59
|
Short circuit current (µA)
70
|
Typology
Silicon Photodiodes
|
|
|
Discontinued
|
KPT801C Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi |
Half Angle (deg)
120
|
Package
ϕ3 ceramic, epoxy lens
|
Peak sens. wavelenght (nm)
800
|
Sensitive Area (mm)
0.64 x 0.64
|
Typology
Silicon Phototransistors
|
Photo Current Vce = 5 V
4 (mA) 1000 (lx)
|