Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Characteristics | Typical Dark Current | Package | Sensitive Area (µmɸ) | Typology |
|---|---|---|---|---|---|---|
|
KPDEA005-56F Kyosemi, Optical Communication Devices, InGaAs Avalanche Photodiodes, |
Characteristics
APD
|
Typical Dark Current
10nA
|
Package
Hermetic sealed
|
Sensitive Area (µmɸ)
55
|
Typology
InGaAs Avalanche Photodiodes
|
|
KPDEA007-56F Kyosemi, Optical Communication Devices, InGaAs Avalanche Photodiodes, InGaAs Avalanche Photodiodes |
Characteristics
APD
|
Typical Dark Current
15nA
|
Package
Hermetic sealed
|
Sensitive Area (µmɸ)
75
|
Typology
InGaAs Avalanche Photodiodes
|
|
Discontinued
|
KPDG006HAn Kyosemi, Optical Communication Devices, GaAs Photodiodes, GaAs photodiode high speed |
Characteristics
Flip-Chip
|
Typical Dark Current
30pA @ 2V
|
Package
Chip
|
Sensitive Area (µmɸ)
60
|
Typology
GaAs Photodiodes
|