Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Characteristics | Typical Dark Current | Package | Sensitive Area (µmɸ) | Typology |
|---|---|---|---|---|---|---|
|
KPEIMC-100 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Characteristics
Edge illuminated
|
Typical Dark Current
35pA @ 5V
|
Package
Chip
|
Sensitive Area (µmɸ)
80x100
|
Typology
InGaAs Photodiodes
|
|
KPEIMC-UDCOM Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Characteristics
Edge illuminated
|
Typical Dark Current
50pA @ 5V
|
Package
Chip
|
Sensitive Area (µmɸ)
100x120
|
Typology
InGaAs Photodiodes
|
|
Discontinued
|
KPDG006HAn Kyosemi, Optical Communication Devices, GaAs Photodiodes, GaAs photodiode high speed |
Characteristics
Flip-Chip
|
Typical Dark Current
30pA @ 2V
|
Package
Chip
|
Sensitive Area (µmɸ)
60
|
Typology
GaAs Photodiodes
|