Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Characteristics | Typical Dark Current | Package | Sensitive Area (µmɸ) | Typology |
|---|---|---|---|---|---|---|
|
KPDE008-S Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Cap Isolated 2-pin Mini Can InGaAs PD |
Characteristics
Mini can
|
Typical Dark Current
160pA (max) @ 5V
|
Package
Mini can
|
Sensitive Area (µmɸ)
80
|
Typology
InGaAs Photodiodes
|
|
KPDE020-S Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Cap Isolated 2-pin Mini Can InGaAs PD |
Characteristics
Mini can
|
Typical Dark Current
400pA (max) @ 5V
|
Package
Mini can
|
Sensitive Area (µmɸ)
200
|
Typology
InGaAs Photodiodes
|
|
KPDE030-S Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Cap Isolated 2-pin Mini Can InGaAs PD |
Characteristics
Mini can
|
Typical Dark Current
600pA (max) @ 5V
|
Package
Mini can
|
Sensitive Area (µmɸ)
300
|
Typology
InGaAs Photodiodes
|
|
Discontinued
|
KPDG006HAn Kyosemi, Optical Communication Devices, GaAs Photodiodes, GaAs photodiode high speed |
Characteristics
Flip-Chip
|
Typical Dark Current
30pA @ 2V
|
Package
Chip
|
Sensitive Area (µmɸ)
60
|
Typology
GaAs Photodiodes
|