Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Dimension | Half Angle (deg) | Wavelength | Package | Output Power (mW) | Operating temperature | Typical Direct Voltage (V) | Typology | Chip Material | Wavelength (nm) | Output Power @lf(mA) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NSxxxL-2SVR Nitride Semiconductor - LED UV |
Dimension
2.7 x 2.7 x 2.0
|
Half Angle (deg)
110
|
Wavelength
360-370 nm
380-390 nm
400-410 nm
|
Package
Surface mount
|
Output Power (mW)
800
930
1000
|
Operating temperature
-10 ~ +85 °C
|
Typical Direct Voltage (V)
3.8
3.6
3.5
|
Typology
Ultra Violet LEDs
|
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|
KED050CXH Kyosemi, Photodevices for Sensors - Emitters, Point Source LED, Point-source Infrared LED |
Half Angle (deg)
115
|
Package
TO-46, hermetic seal
|
Output Power (mW)
2.4
|
Typology
Point Source LEDs
|
Chip Material
GaAIAs
|
Wavelength (nm)
850
|
Output Power @lf(mA)
50
|
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|
KED050HQ Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs Parallel Beam Infrared LED |
Half Angle (deg)
7.5
|
Package
TO-46, hermetic seal
|
Output Power (mW)
2.4
|
Typology
Parallel Beam LEds
|
Chip Material
GaAIAs
|
Wavelength (nm)
850
|
Output Power @lf(mA)
50
|