Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Characteristics | Typical Dark Current | Package | Sensitive Area (µmɸ) | Typology | Half Angle (deg) | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (µA) |
|---|---|---|---|---|---|---|---|---|---|---|
|
KPA4-2N Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Characteristics
Array
|
Typical Dark Current
80pA @ 5V
|
Package
4ch array with 250µm pitch
|
Sensitive Area (µmɸ)
80
|
Typology
InGaAs Photodiodes
|
||||
|
Discontinued
|
KPD3065C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Package
ϕ 6,5 ceramic, epoxy lens
|
Typology
Silicon Photodiodes
|
Half Angle (deg)
120
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
2.59 x 2.59
|
Short circuit current (µA)
70
|