Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Package | Peak sens. wavelenght (nm) | Responsivity (mA/W) @λ(nm) | Sensitive Area (mm) | Typology | Characteristics | Typical Dark Current | Sensitive Area (µmɸ) |
|---|---|---|---|---|---|---|---|---|---|
|
KPDE086S-H85P Photodevices for Sensors - Detectors, Thermoelectrically Cooled InGaAs-InAs Photodiodes, Kyosemi |
Package
TO-46, hermetic seal, TE cooler
|
Peak sens. wavelenght (nm)
1600
|
Responsivity (mA/W) @λ(nm)
1000 @ 1550
|
Sensitive Area (mm)
0.86 x 0.86
|
Typology
Thermoelectrically Cooled InGaAs-InAs Photodiodes
|
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|
KPA4-2N Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Package
4ch array with 250µm pitch
|
Typology
InGaAs Photodiodes
|
Characteristics
Array
|
Typical Dark Current
80pA @ 5V
|
Sensitive Area (µmɸ)
80
|