Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Wavelength | Output | Package | Typology | Characteristics | Typical Dark Current | Sensitive Area (µmɸ) |
|---|---|---|---|---|---|---|---|---|
|
GUVB-T11GD Genicom - Aluminium Gallium Nitride Photodiode UV |
Wavelength
220-320 nm
|
Output
Current
|
Package
TO-46
|
Typology
AlGaN Photodiodes
|
|||
|
GUVC-T10GD-L185 Genicom - Aluminium Gallium Nitride Based Material UV (185 nm) Photodiode |
Wavelength
185 nm
|
Output
Corrente
|
Package
TO-46
|
Typology
AlGaN Photodiodes
|
|||
|
GUVC-T1xGD Genicom - Aluminium Gallium Nitride Photodiode UV |
Wavelength
220-280 nm
|
Output
Current
|
Package
TO-46
|
Typology
AlGaN Photodiodes
|
|||
|
GVBL-T12GD Genicom - Indium Gallium Nitride UV Photodiode |
Wavelength
330-445 nm
|
Output
Current
|
Package
TO-46
|
Typology
InGaN Photodiodes
|
|||
|
GVGR-T11GD Genicom - Indium Gallium Nitride UV Photodiode |
Wavelength
295-505 nm
|
Output
Current
|
Package
TO-46
|
Typology
InGaN Photodiodes
|
|||
|
KPA8-2N Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Package
8ch array with 250µm pitch
|
Typology
InGaAs Photodiodes
|
Characteristics
Array
|
Typical Dark Current
80pA @ 5V
|
Sensitive Area (µmɸ)
80
|