Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Half Angle (deg) | Package | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (µA) | Typology | Responsivity (mA/W) @λ(nm) | Sensitive Wavelenght (nm) | Photo Current Vce = 5 V |
|---|---|---|---|---|---|---|---|---|---|---|
|
Discontinued
|
KPD101M31 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
60
|
Package
ϕ3 plastic mold
|
Peak sens. wavelenght (nm)
850
|
Sensitive Area (mm)
0.81 x 0.81
|
Short circuit current (µA)
30
|
Typology
Silicon Photodiodes
|
|||
|
Discontinued
|
KPD101M32 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
90
|
Package
ϕ3 plastic mold
|
Peak sens. wavelenght (nm)
850
|
Sensitive Area (mm)
0.81 x 0.81
|
Short circuit current (µA)
16
|
Typology
Silicon Photodiodes
|
|||
|
Discontinued
|
KPD104M32 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
70
|
Package
ϕ3 plastic mold
|
Peak sens. wavelenght (nm)
850
|
Sensitive Area (mm)
0.81 x 0.81
|
Short circuit current (µA)
10
|
Typology
Silicon Photodiodes
|
|||
|
Discontinued
|
KPDU31S1A-B1 Photodevices for Sensors - Detectors, GaN UV Sensors, Kyosemi |
Package
Ceramic, Surface mount
|
Sensitive Area (mm)
0.07
|
Typology
GaN UV Sensors
|
Responsivity (mA/W) @λ(nm)
80 @ 300
|
Sensitive Wavelenght (nm)
200 - 330
|
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|
Discontinued
|
KPDU31S1A-Q1 Photodevices for Sensors - Detectors, GaN UV Sensors, Kyosemi |
Package
Ceramic, Surface mount
|
Sensitive Area (mm)
0.07
|
Typology
GaN UV Sensors
|
Responsivity (mA/W) @λ(nm)
75 @ 300
|
Sensitive Wavelenght (nm)
200 - 330
|
||||
|
Discontinued
|
KPT081M31 Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi |
Half Angle (deg)
60
|
Package
ϕ3 plastic mold
|
Peak sens. wavelenght (nm)
800
|
Sensitive Area (mm)
0.64 x 0.64
|
Typology
Silicon Phototransistors
|
Photo Current Vce = 5 V
7 (mA) 1000 (lx)
|
|||
|
Discontinued
|
KPT081M32 Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi |
Half Angle (deg)
90
|
Package
ϕ3 plastic mold
|
Peak sens. wavelenght (nm)
800
|
Sensitive Area (mm)
0.64 x 0.64
|
Typology
Silicon Phototransistors
|
Photo Current Vce = 5 V
4 (mA) 1000 (lx)
|