Optoelectronic sensors

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Product	Description	Characteristics	Typical Dark Current	Package	Sensitive Area (µmɸ)	Typology	Responsivity (mA/W) @λ(nm)	Sensitive Area (mm)	Sensitive Wavelenght (nm)
Add to comparison	KPDE008-S Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Cap Isolated 2-pin Mini Can InGaAs PD	Characteristics Mini can	Typical Dark Current 160pA (max) @ 5V	Package Mini can	Sensitive Area (µmɸ) 80	Typology InGaAs Photodiodes
Add to comparison	KPDE020-S Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Cap Isolated 2-pin Mini Can InGaAs PD	Characteristics Mini can	Typical Dark Current 400pA (max) @ 5V	Package Mini can	Sensitive Area (µmɸ) 200	Typology InGaAs Photodiodes
Add to comparison	KPDE030-S Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Cap Isolated 2-pin Mini Can InGaAs PD	Characteristics Mini can	Typical Dark Current 600pA (max) @ 5V	Package Mini can	Sensitive Area (µmɸ) 300	Typology InGaAs Photodiodes
Discontinued Add to comparison	KPDU31S1A-B1 Photodevices for Sensors - Detectors, GaN UV Sensors, Kyosemi			Package Ceramic, Surface mount		Typology GaN UV Sensors	Responsivity (mA/W) @λ(nm) 80 @ 300	Sensitive Area (mm) 0.07	Sensitive Wavelenght (nm) 200 - 330
Discontinued Add to comparison	KPDU31S1A-Q1 Photodevices for Sensors - Detectors, GaN UV Sensors, Kyosemi			Package Ceramic, Surface mount		Typology GaN UV Sensors	Responsivity (mA/W) @λ(nm) 75 @ 300	Sensitive Area (mm) 0.07	Sensitive Wavelenght (nm) 200 - 330

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