Optoelectronic sensors | Tecnosens S.p.a.

Optoelectronic sensors

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Product	Description	Characteristics	Typical Dark Current	Package	Sensitive Area (µmɸ)	Typology	Chip Material	Half Angle (deg)	Wavelength (nm)	Output Power @lf(mA)	Output Power (mW)	Peak sens. wavelenght (nm)	Sensitive Area (mm)	Short circuit current (µA)
Add to comparison	KPDE10GC-V2 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, 10Gbps InGaAs photodiode	Characteristics High speed	Typical Dark Current 10pA @ 5V	Package Chip	Sensitive Area (µmɸ) 28	Typology InGaAs Photodiodes
Add to comparison	KPEIMC-100 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode	Characteristics Edge illuminated	Typical Dark Current 35pA @ 5V	Package Chip	Sensitive Area (µmɸ) 80x100	Typology InGaAs Photodiodes
Add to comparison	KPEIMC-UDCOM Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode	Characteristics Edge illuminated	Typical Dark Current 50pA @ 5V	Package Chip	Sensitive Area (µmɸ) 100x120	Typology InGaAs Photodiodes
Add to comparison	KPID150HC Kyosemi, Optical Communication Devices, Si High Speed & High Responsivity Photodiode	Characteristics Si high speed	Typical Dark Current 0.8nA @ 10V	Package Chip	Sensitive Area (µmɸ) 1500	Typology Si PIN Photodiodes
Discontinued Add to comparison	KED351CDL Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED			Package ϕ3 ceramic, epoxy lens		Typology Infrared LEDs	Chip Material GaAIAs	Half Angle (deg) 145	Wavelength (nm) 870	Output Power @lf(mA) 20	Output Power (mW) 6
Discontinued Add to comparison	KED351RCD Kyosemi, Photodevices for Sensors - Emitters, GaAIAs Red LED			Package ϕ3 ceramic, epoxy lens		Typology Red LEDs	Chip Material GaAIAs	Half Angle (deg) 160	Wavelength (nm) 660	Output Power @lf(mA) 20	Output Power (mW) 3.2
Discontinued Add to comparison	KED501C Kyosemi, Photodevices for Sensors - Emitters, GaAs Infrared LED			Package ϕ3 ceramic, epoxy lens		Typology Infrared LEDs	Chip Material GaAs	Half Angle (deg) 170	Wavelength (nm) 950	Output Power @lf(mA) 40	Output Power (mW) 4.5
Discontinued Add to comparison	KED602C Kyosemi, Photodevices for Sensors - Emitters, Infrared LED			Package ϕ3 ceramic, epoxy lens		Typology Infrared LEDs	Chip Material GaAIAs	Half Angle (deg) 110	Wavelength (nm) 890	Output Power @lf(mA) 40	Output Power (mW) 6
Discontinued Add to comparison	KPD1201C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi			Package ϕ3 ceramic, epoxy lens		Typology Silicon Photodiodes		Half Angle (deg) 145				Peak sens. wavelenght (nm) 880	Sensitive Area (mm) 0.92 x 0.92	Short circuit current (µA) 12
Discontinued Add to comparison	KPDE005HAn Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode	Characteristics Array	Typical Dark Current 30pA @ 5V	Package Chip	Sensitive Area (µmɸ) 50	Typology InGaAs Photodiodes