Optoelectronic sensors | Tecnosens S.p.a.

Optoelectronic sensors

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Product	Description	Chip Material	Half Angle (deg)	Wavelength (nm)	Package	Output Power @lf(mA)	Output Power (mW)	Typology	Characteristics	Typical Dark Current	Sensitive Area (µmɸ)
Add to comparison	KED050CXK Kyosemi, Photodevices for Sensors - Emitters, Point Source LED, Point-source Infrared LED	Chip Material GaAIAs	Half Angle (deg) 125	Wavelength (nm) 850	Package TO-46, epoxy lens	Output Power @lf(mA) 50	Output Power (mW) 5	Typology Point Source LEDs
Add to comparison	KPDE10GC-V2 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, 10Gbps InGaAs photodiode				Package Chip			Typology InGaAs Photodiodes	Characteristics High speed	Typical Dark Current 10pA @ 5V	Sensitive Area (µmɸ) 28
Add to comparison	KPEIMC-100 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode				Package Chip			Typology InGaAs Photodiodes	Characteristics Edge illuminated	Typical Dark Current 35pA @ 5V	Sensitive Area (µmɸ) 80x100
Add to comparison	KPEIMC-UDCOM Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode				Package Chip			Typology InGaAs Photodiodes	Characteristics Edge illuminated	Typical Dark Current 50pA @ 5V	Sensitive Area (µmɸ) 100x120
Add to comparison	KPID150HC Kyosemi, Optical Communication Devices, Si High Speed & High Responsivity Photodiode				Package Chip			Typology Si PIN Photodiodes	Characteristics Si high speed	Typical Dark Current 0.8nA @ 10V	Sensitive Area (µmɸ) 1500
Discontinued Add to comparison	KEDE1458K Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED	Chip Material InGaAsP	Half Angle (deg) 110	Wavelength (nm) 1450	Package TO-46, epoxy lens	Output Power @lf(mA) 50	Output Power (mW) 3	Typology Infrared LEDs
Discontinued Add to comparison	KPDE005HAn Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode				Package Chip			Typology InGaAs Photodiodes	Characteristics Array	Typical Dark Current 30pA @ 5V	Sensitive Area (µmɸ) 50
Discontinued Add to comparison	KPDEH16C Optical Communication Devices, InGaAs Photodiodes, 25GHz InGaAs photodiode				Package Chip			Typology InGaAs Photodiodes	Characteristics High speed	Typical Dark Current 0.5nA @ 2V	Sensitive Area (µmɸ) 16
Discontinued Add to comparison	KPDEH16DC Optical Communication Devices, InGaAs Photodiodes, 25GHz InGaAs photodiode				Package Chip			Typology InGaAs Photodiodes	Characteristics High speed	Typical Dark Current 0.5nA @ 2V	Sensitive Area (µmɸ) 16
Discontinued Add to comparison	KPDEH16QC Kyosemi, Optical Communication Devices, InGaAs Photodiodes				Package Chip			Typology InGaAs Photodiodes	Characteristics High speed	Typical Dark Current 0.5nA @ 2V	Sensitive Area (µmɸ) 16