Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Dimension | Wavelength | Package | Output Power (mW) | Typical Direct Voltage (V) | Typology | Characteristics | Typical Dark Current | Sensitive Area (µmɸ) | Bit Rate (bps) |
|---|---|---|---|---|---|---|---|---|---|---|---|
|
NS275B-44FA Nitride Semiconductor - Deep UV LED |
Dimension
20 x 20 x 4
|
Wavelength
270-280 nm
|
Package
Chip on board
|
Output Power (mW)
290
|
Typical Direct Voltage (V)
31
|
Typology
Ultra Violet LEDs
|
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|
NS310M-88IG Nitride Semiconductor - Deep UV LED |
Dimension
45 x 45 x 4
|
Wavelength
310 nm
|
Package
Chip on board
|
Output Power (mW)
70
|
Typical Direct Voltage (V)
48
|
Typology
Ultra Violet LEDs
|
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|
KPDEA005-56F Kyosemi, Optical Communication Devices, InGaAs Avalanche Photodiodes, |
Package
Hermetic sealed
|
Typology
InGaAs Avalanche Photodiodes
|
Characteristics
APD
|
Typical Dark Current
10nA
|
Sensitive Area (µmɸ)
55
|
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|
KPDEA007-56F Kyosemi, Optical Communication Devices, InGaAs Avalanche Photodiodes, InGaAs Avalanche Photodiodes |
Package
Hermetic sealed
|
Typology
InGaAs Avalanche Photodiodes
|
Characteristics
APD
|
Typical Dark Current
15nA
|
Sensitive Area (µmɸ)
75
|
|||||
|
Discontinued
|
KPDE030SL Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Package
Hermetic sealed
|
Typology
InGaAs Photodiodes
|
Characteristics
L-band
|
Typical Dark Current
100pA @ 5V
|
Sensitive Area (µmɸ)
300
|
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|
Discontinued
|
KPDX2GE Kyosemi, Optical Communication Devices, InGaAs PD-TIA Receivers, 2.5Gbps PD-TIA Receiver with Long Focal Lenght |
Package
Hermetic sealed
|
Typology
InGaAs PD-TIA Receivers
|
Characteristics
Preamplified receivers
|
Bit Rate (bps)
2.5G
|
||||||
|
Discontinued
|
KPDX3G Kyosemi, Optical Communication Devices, InGaAs PD-TIA Receivers, InGaAs PIN PD-TIA |
Package
Hermetic sealed
|
Typology
InGaAs PD-TIA Receivers
|
Characteristics
Preamplified receivers
|
Bit Rate (bps)
3G
|
||||||
|
Discontinued
|
KPID020D Kyosemi, Optical Communication Devices, Si PIN Photodiodes, High Speed Photodiode |
Package
Hermetic sealed
|
Typology
Si PIN Photodiodes
|
Characteristics
Si high speed
|
Typical Dark Current
10pA @ 3V
|
Sensitive Area (µmɸ)
200
|
|||||
|
Discontinued
|
KPID050M Kyosemi, Optical Communication Devices, Si PIN Photodiodes, High Speed Photodiode |
Package
Hermetic sealed
|
Typology
Si PIN Photodiodes
|
Characteristics
Si high speed
|
Typical Dark Current
40pA @ 3V
|
Sensitive Area (µmɸ)
500
|