Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Dimension | Wavelength | Package | Output Power (mW) | Typical Direct Voltage (V) | Typology | Characteristics | Typical Dark Current | Sensitive Area (µmɸ) |
|---|---|---|---|---|---|---|---|---|---|---|
|
NS275B-44FA Nitride Semiconductor - Deep UV LED |
Dimension
20 x 20 x 4
|
Wavelength
270-280 nm
|
Package
Chip on board
|
Output Power (mW)
290
|
Typical Direct Voltage (V)
31
|
Typology
Ultra Violet LEDs
|
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|
NS310M-88IG Nitride Semiconductor - Deep UV LED |
Dimension
45 x 45 x 4
|
Wavelength
310 nm
|
Package
Chip on board
|
Output Power (mW)
70
|
Typical Direct Voltage (V)
48
|
Typology
Ultra Violet LEDs
|
|||
|
KPDE008-S Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Cap Isolated 2-pin Mini Can InGaAs PD |
Package
Mini can
|
Typology
InGaAs Photodiodes
|
Characteristics
Mini can
|
Typical Dark Current
160pA (max) @ 5V
|
Sensitive Area (µmɸ)
80
|
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|
KPDE020-S Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Cap Isolated 2-pin Mini Can InGaAs PD |
Package
Mini can
|
Typology
InGaAs Photodiodes
|
Characteristics
Mini can
|
Typical Dark Current
400pA (max) @ 5V
|
Sensitive Area (µmɸ)
200
|
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|
KPDE030-S Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Cap Isolated 2-pin Mini Can InGaAs PD |
Package
Mini can
|
Typology
InGaAs Photodiodes
|
Characteristics
Mini can
|
Typical Dark Current
600pA (max) @ 5V
|
Sensitive Area (µmɸ)
300
|