Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Chip Material | Half Angle (deg) | Wavelength (nm) | Package | Output Power @lf(mA) | Output Power (mW) | Typology | Colour | Resin colour | External Diameter | Light intensity (mcd) | Max Direct Voltage (V) | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (µA) | Photo Current Vce = 5 V |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Discontinued
|
KED351CDL Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
145
|
Wavelength (nm)
870
|
Package
ϕ3 ceramic, epoxy lens
|
Output Power @lf(mA)
20
|
Output Power (mW)
6
|
Typology
Infrared LEDs
|
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|
Discontinued
|
KED351RCD Kyosemi, Photodevices for Sensors - Emitters, GaAIAs Red LED |
Chip Material
GaAIAs
|
Half Angle (deg)
160
|
Wavelength (nm)
660
|
Package
ϕ3 ceramic, epoxy lens
|
Output Power @lf(mA)
20
|
Output Power (mW)
3.2
|
Typology
Red LEDs
|
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|
Discontinued
|
KED501C Kyosemi, Photodevices for Sensors - Emitters, GaAs Infrared LED |
Chip Material
GaAs
|
Half Angle (deg)
170
|
Wavelength (nm)
950
|
Package
ϕ3 ceramic, epoxy lens
|
Output Power @lf(mA)
40
|
Output Power (mW)
4.5
|
Typology
Infrared LEDs
|
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|
Discontinued
|
KED602C Kyosemi, Photodevices for Sensors - Emitters, Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
110
|
Wavelength (nm)
890
|
Package
ϕ3 ceramic, epoxy lens
|
Output Power @lf(mA)
40
|
Output Power (mW)
6
|
Typology
Infrared LEDs
|
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|
Discontinued
|
KED661M53 Kyosemi, Photodevices for Sensors - Emitters, Plastic Mold LEDs for sensors, Red color, Kyosemi Photodevices for sensors |
Chip Material
GaAIAs
|
Half Angle (deg)
70
|
Wavelength (nm)
660
|
Package
M53
|
Output Power @lf(mA)
20
|
Output Power (mW)
3
|
Typology
Plastic Mold LEDs for Sensors
|
Colour
Red
|
Resin colour
Clear
|
External Diameter
⌀5
|
Light intensity (mcd)
40
|
Max Direct Voltage (V)
2.3
|
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|
Discontinued
|
KED941M53VC Kyosemi, Photodevices for Sensors - Emitters, Plastic Mold LEDs for sensors, Infrared color, Kyosemi Photodevices for sensors |
Chip Material
GaAs
|
Half Angle (deg)
90
|
Wavelength (nm)
940
|
Package
M53
|
Output Power @lf(mA)
50
|
Output Power (mW)
11
|
Typology
Plastic Mold LEDs for Sensors
|
Colour
Infrared
|
Resin colour
Black
|
External Diameter
⌀5
|
Max Direct Voltage (V)
1.6
|
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|
Discontinued
|
KPD1201C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
145
|
Package
ϕ3 ceramic, epoxy lens
|
Typology
Silicon Photodiodes
|
Peak sens. wavelenght (nm)
880
|
Sensitive Area (mm)
0.92 x 0.92
|
Short circuit current (µA)
12
|
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|
Discontinued
|
KPID1301C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
145
|
Package
ϕ3 ceramic, epoxy lens
|
Typology
Silicon Photodiodes
|
Peak sens. wavelenght (nm)
900
|
Sensitive Area (mm)
1.10 x 1.10
|
Short circuit current (µA)
12
|
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|
Discontinued
|
KPT801C Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi |
Half Angle (deg)
120
|
Package
ϕ3 ceramic, epoxy lens
|
Typology
Silicon Phototransistors
|
Peak sens. wavelenght (nm)
800
|
Sensitive Area (mm)
0.64 x 0.64
|
Photo Current Vce = 5 V
4 (mA) 1000 (lx)
|