Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Chip Material | Half Angle (deg) | Wavelength (nm) | Package | Output Power @lf(mA) | Output Power (mW) | Typology | Characteristics | Typical Dark Current | Sensitive Area (µmɸ) |
|---|---|---|---|---|---|---|---|---|---|---|---|
|
KED050CXK Kyosemi, Photodevices for Sensors - Emitters, Point Source LED, Point-source Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
125
|
Wavelength (nm)
850
|
Package
TO-46, epoxy lens
|
Output Power @lf(mA)
50
|
Output Power (mW)
5
|
Typology
Point Source LEDs
|
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|
KPDE008-S Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Cap Isolated 2-pin Mini Can InGaAs PD |
Package
Mini can
|
Typology
InGaAs Photodiodes
|
Characteristics
Mini can
|
Typical Dark Current
160pA (max) @ 5V
|
Sensitive Area (µmɸ)
80
|
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|
KPDE020-S Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Cap Isolated 2-pin Mini Can InGaAs PD |
Package
Mini can
|
Typology
InGaAs Photodiodes
|
Characteristics
Mini can
|
Typical Dark Current
400pA (max) @ 5V
|
Sensitive Area (µmɸ)
200
|
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|
KPDE030-S Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Cap Isolated 2-pin Mini Can InGaAs PD |
Package
Mini can
|
Typology
InGaAs Photodiodes
|
Characteristics
Mini can
|
Typical Dark Current
600pA (max) @ 5V
|
Sensitive Area (µmɸ)
300
|
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|
Discontinued
|
KEDE1458K Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED |
Chip Material
InGaAsP
|
Half Angle (deg)
110
|
Wavelength (nm)
1450
|
Package
TO-46, epoxy lens
|
Output Power @lf(mA)
50
|
Output Power (mW)
3
|
Typology
Infrared LEDs
|