Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Chip Material | Half Angle (deg) | Wavelength (nm) | Package | Output Power @lf(mA) | Output Power (mW) | Typology | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (µA) |
|---|---|---|---|---|---|---|---|---|---|---|---|
|
Discontinued
|
KED365US1 Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led |
Chip Material
GaN
|
Half Angle (deg)
100
|
Wavelength (nm)
367
|
Package
Surface mount, ceramic
|
Output Power @lf(mA)
20
|
Output Power (mW)
2.1
|
Typology
Ultra Violet LEDs
|
|||
|
Discontinued
|
KED373US1 Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led, InGaN GaN UV LED |
Chip Material
InGaN
|
Half Angle (deg)
100
|
Wavelength (nm)
373
|
Package
Surface mount, ceramic
|
Output Power @lf(mA)
20
|
Output Power (mW)
1.3
|
Typology
Ultra Violet LEDs
|
|||
|
Discontinued
|
KED405UMS1 Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led, InGaN Violet LED |
Chip Material
InGaN
|
Half Angle (deg)
130
|
Wavelength (nm)
405
|
Package
Surface mount, ceramic
|
Output Power @lf(mA)
20
|
Output Power (mW)
13
|
Typology
Ultra Violet LEDs
|
|||
|
Discontinued
|
KPD3065C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
120
|
Package
ϕ 6,5 ceramic, epoxy lens
|
Typology
Silicon Photodiodes
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
2.59 x 2.59
|
Short circuit current (µA)
70
|