Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Wavelength | Output | Package | Typology | Responsivity (mA/W) @λ(nm) | Sensitive Area (µmɸ) | Sensitive Wavelenght (nm) | Peak sens. wavelenght (nm) | Chip Material | Half Angle (deg) | Wavelength (nm) | Output Power @lf(mA) | Output Power (mW) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GUVB-T11GD Genicom - Aluminium Gallium Nitride Photodiode UV |
Wavelength
220-320 nm
|
Output
Current
|
Package
TO-46
|
Typology
AlGaN Photodiodes
|
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GUVC-T10GD-L185 Genicom - Aluminium Gallium Nitride Based Material UV (185 nm) Photodiode |
Wavelength
185 nm
|
Output
Corrente
|
Package
TO-46
|
Typology
AlGaN Photodiodes
|
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|
GUVC-T1xGD Genicom - Aluminium Gallium Nitride Photodiode UV |
Wavelength
220-280 nm
|
Output
Current
|
Package
TO-46
|
Typology
AlGaN Photodiodes
|
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|
GVBL-T12GD Genicom - Indium Gallium Nitride UV Photodiode |
Wavelength
330-445 nm
|
Output
Current
|
Package
TO-46
|
Typology
InGaN Photodiodes
|
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GVGR-T11GD Genicom - Indium Gallium Nitride UV Photodiode |
Wavelength
295-505 nm
|
Output
Current
|
Package
TO-46
|
Typology
InGaN Photodiodes
|
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|
KPDE150 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Typology
InGaAs NIR Photodiodes
|
Responsivity (mA/W) @λ(nm)
1.0 @ 1550
|
Sensitive Area (µmɸ)
1500
|
Sensitive Wavelenght (nm)
900 - 1700
|
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KPID020D-H8 Photodevices for Sensors - Detectors, High Speed Silicon Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Typology
High Speed Silicon Photodiodes
|
Responsivity (mA/W) @λ(nm)
350 @ 850
|
Sensitive Area (µmɸ)
200
|
Peak sens. wavelenght (nm)
700
|
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KED351HDL Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED |
Package
TO-18, hermetic seal
|
Typology
Infrared LEDs
|
Chip Material
GaAIAs
|
Half Angle (deg)
12
|
Wavelength (nm)
870
|
Output Power @lf(mA)
20
|
Output Power (mW)
4
|
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KED351RHD Kyosemi, Photodevices for Sensors - Emitters, GaAIAs Red LED |
Package
TO-18, hermetic seal
|
Typology
Red LEDs
|
Chip Material
GaAIAs
|
Half Angle (deg)
10
|
Wavelength (nm)
660
|
Output Power @lf(mA)
20
|
Output Power (mW)
1.8
|
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KED354RHD Kyosemi, Photodevices for Sensors - Emitters, GaAIAs Red LED |
Package
TO-18, hermetic seal
|
Typology
Red LEDs
|
Chip Material
GaAIAs
|
Half Angle (deg)
45
|
Wavelength (nm)
660
|
Output Power @lf(mA)
20
|
Output Power (mW)
3
|