Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Package | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (µA) | Typology | Chip Material | Half Angle (deg) | Wavelength (nm) | Output Power @lf(mA) | Output Power (mW) |
|---|---|---|---|---|---|---|---|---|---|---|---|
|
KPD31S Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Package
Surface mount
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
2.80 x 0.80
|
Short circuit current (µA)
22
|
Typology
Silicon Photodiodes
|
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KED351HDL Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED |
Package
TO-18, hermetic seal
|
Typology
Infrared LEDs
|
Chip Material
GaAIAs
|
Half Angle (deg)
12
|
Wavelength (nm)
870
|
Output Power @lf(mA)
20
|
Output Power (mW)
4
|
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|
KED353KDL Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED |
Package
TO-18, epoxy lens
|
Typology
Infrared LEDs
|
Chip Material
GaAIAs
|
Half Angle (deg)
42
|
Wavelength (nm)
870
|
Output Power @lf(mA)
20
|
Output Power (mW)
6
|
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|
KED601H Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED |
Package
TO-18, hermetic seal
|
Typology
Infrared LEDs
|
Chip Material
GaAIAs
|
Half Angle (deg)
14
|
Wavelength (nm)
890
|
Output Power @lf(mA)
100
|
Output Power (mW)
9
|
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|
KED602K Kyosemi, Photodevices for Sensors - Emitters, Infrared LED |
Package
TO-18, epoxy lens
|
Typology
Infrared LEDs
|
Chip Material
GaAIAs
|
Half Angle (deg)
45
|
Wavelength (nm)
890
|
Output Power @lf(mA)
50
|
Output Power (mW)
15
|
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|
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KED604H Kyosemi, Photodevices for Sensors - Emitters, Infrared LED |
Package
TO-18, hermetic seal
|
Typology
Infrared LEDs
|
Chip Material
GaAIAs
|
Half Angle (deg)
60
|
Wavelength (nm)
890
|
Output Power @lf(mA)
100
|
Output Power (mW)
11
|
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|
KEDE1304H Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED |
Package
TO-18, hermetic seal
|
Typology
Infrared LEDs
|
Chip Material
InGaAsP
|
Half Angle (deg)
80
|
Wavelength (nm)
1300
|
Output Power @lf(mA)
50
|
Output Power (mW)
2.5
|
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|
KEDE1452H Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED |
Package
TO-18, hermetic seal
|
Typology
Infrared LEDs
|
Chip Material
InGaAsP
|
Half Angle (deg)
20
|
Wavelength (nm)
1450
|
Output Power @lf(mA)
50
|
Output Power (mW)
2.8
|
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|
KEDE1454H Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED |
Package
TO-18, hermetic seal
|
Typology
Infrared LEDs
|
Chip Material
InGaAsP
|
Half Angle (deg)
80
|
Wavelength (nm)
1450
|
Output Power @lf(mA)
50
|
Output Power (mW)
2.5
|
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|
KEDE1552H Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED |
Package
TO-18, hermetic seal
|
Typology
Infrared LEDs
|
Chip Material
InGaAsP
|
Half Angle (deg)
20
|
Wavelength (nm)
1550
|
Output Power @lf(mA)
50
|
Output Power (mW)
1.8
|