Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Package | Peak sens. wavelenght (nm) | Responsivity (mA/W) @λ(nm) | Sensitive Area (mm) | Typology | Chip Material | Half Angle (deg) | Wavelength (nm) | Output Power @lf(mA) | Output Power (mW) |
|---|---|---|---|---|---|---|---|---|---|---|---|
|
KPDE086S-H85P Photodevices for Sensors - Detectors, Thermoelectrically Cooled InGaAs-InAs Photodiodes, Kyosemi |
Package
TO-46, hermetic seal, TE cooler
|
Peak sens. wavelenght (nm)
1600
|
Responsivity (mA/W) @λ(nm)
1000 @ 1550
|
Sensitive Area (mm)
0.86 x 0.86
|
Typology
Thermoelectrically Cooled InGaAs-InAs Photodiodes
|
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KED050HQ Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs Parallel Beam Infrared LED |
Package
TO-46, hermetic seal
|
Typology
Parallel Beam LEds
|
Chip Material
GaAIAs
|
Half Angle (deg)
7.5
|
Wavelength (nm)
850
|
Output Power @lf(mA)
50
|
Output Power (mW)
2.4
|
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KED050HV Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs Parallel Beam Infrared LED |
Package
TO-46, hermetic seal
|
Typology
Parallel Beam LEds
|
Chip Material
GaAIAs
|
Half Angle (deg)
6
|
Wavelength (nm)
850
|
Output Power @lf(mA)
50
|
Output Power (mW)
2
|
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|
KED109Z-N Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs High Power Infrare LED |
Package
TO-46, hermetic seal
|
Typology
Parallel Beam LEds
|
Chip Material
GaAIAs
|
Half Angle (deg)
18
|
Wavelength (nm)
890
|
Output Power @lf(mA)
20
|
Output Power (mW)
3
|
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|
KED308HQ Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs Parallel Beam Infrared LED |
Package
TO-46, hermetic seal
|
Typology
Parallel Beam LEds
|
Chip Material
GaAIAs
|
Half Angle (deg)
12
|
Wavelength (nm)
870
|
Output Power @lf(mA)
50
|
Output Power (mW)
12
|
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|
KED308HV Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs Parallel Beam Infrared LED |
Package
TO-46, hermetic seal
|
Typology
Parallel Beam LEds
|
Chip Material
GaAIAs
|
Half Angle (deg)
8
|
Wavelength (nm)
870
|
Output Power @lf(mA)
50
|
Output Power (mW)
7
|
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|
KED358HQ-N Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs High Power Infrare LED |
Package
TO-46, hermetic seal
|
Typology
Parallel Beam LEds
|
Chip Material
GaAIAs
|
Half Angle (deg)
11
|
Wavelength (nm)
890
|
Output Power @lf(mA)
20
|
Output Power (mW)
3
|
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|
KED358RHDQ Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs Red LED |
Package
TO-46, hermetic seal
|
Typology
Parallel Beam LEds
|
Chip Material
GaAIAs
|
Half Angle (deg)
11
|
Wavelength (nm)
660
|
Output Power @lf(mA)
20
|
Output Power (mW)
2
|
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|
KPC8-T Photodevices for Sensors - Detectors, InGaAs Photovolotaic Power Converter, Kyosemi |
Typology
Thermoelectrically Cooled InGaAs-InAs Photodiodes
|
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|
Discontinued
|
KPDE86S-H54P Photodevices for Sensors - Detectors, Thermoelectrically Cooled InGaAs-InAs Photodiodes, Kyosemi |
Package
TO-5, hermetic seal, TE cooler
|
Peak sens. wavelenght (nm)
1600
|
Responsivity (mA/W) @λ(nm)
1000 @ 1550
|
Sensitive Area (mm)
0.86 x 0.86
|
Typology
Thermoelectrically Cooled InGaAs-InAs Photodiodes
|