Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Chip Material | Wavelength (nm) | Package | Output Power @lf(mA) | Output Power (mW) | Typology | Peak sens. wavelenght (nm) | Responsivity (mA/W) @λ(nm) | Sensitive Area (mm) | Half Angle (deg) |
|---|---|---|---|---|---|---|---|---|---|---|---|
|
KED050CX-T Kyosemi, Photodevices for Sensors - Emitters, Point Source LED, Infrared LED Pigtail |
Chip Material
GaAIAs
|
Wavelength (nm)
850
|
Package
Pigtail
|
Output Power @lf(mA)
50
|
Output Power (mW)
-16(dBm)
|
Typology
Point Source LEDs
|
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|
KPDE086S-H85P Photodevices for Sensors - Detectors, Thermoelectrically Cooled InGaAs-InAs Photodiodes, Kyosemi |
Package
TO-46, hermetic seal, TE cooler
|
Typology
Thermoelectrically Cooled InGaAs-InAs Photodiodes
|
Peak sens. wavelenght (nm)
1600
|
Responsivity (mA/W) @λ(nm)
1000 @ 1550
|
Sensitive Area (mm)
0.86 x 0.86
|
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|
KED050CXH Kyosemi, Photodevices for Sensors - Emitters, Point Source LED, Point-source Infrared LED |
Chip Material
GaAIAs
|
Wavelength (nm)
850
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
2.4
|
Typology
Point Source LEDs
|
Half Angle (deg)
115
|
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|
KED050CXK Kyosemi, Photodevices for Sensors - Emitters, Point Source LED, Point-source Infrared LED |
Chip Material
GaAIAs
|
Wavelength (nm)
850
|
Package
TO-46, epoxy lens
|
Output Power @lf(mA)
50
|
Output Power (mW)
5
|
Typology
Point Source LEDs
|
Half Angle (deg)
125
|
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|
KED080RAXH Kyosemi, Photodevices for Sensors - Emitters, Point Source LED |
Chip Material
AIGaInP
|
Wavelength (nm)
650
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
0.6
|
Typology
Point Source LEDs
|
Half Angle (deg)
115
|
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|
KED160RAXH Kyosemi, Photodevices for Sensors - Emitters, Point Source LED |
Chip Material
AIGaInP
|
Wavelength (nm)
650
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
0.8
|
Typology
Point Source LEDs
|
Half Angle (deg)
115
|
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|
KPC8-T Photodevices for Sensors - Detectors, InGaAs Photovolotaic Power Converter, Kyosemi |
Typology
Thermoelectrically Cooled InGaAs-InAs Photodiodes
|
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|
Discontinued
|
KED080DXH Kyosemi, Photodevices for Sensors - Emitters, Point Source LED, Point-source Infrared LED |
Chip Material
GaAIAs
|
Wavelength (nm)
850
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
1.0
|
Typology
Point Source LEDs
|
Half Angle (deg)
110
|
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|
Discontinued
|
KPDE86S-H54P Photodevices for Sensors - Detectors, Thermoelectrically Cooled InGaAs-InAs Photodiodes, Kyosemi |
Package
TO-5, hermetic seal, TE cooler
|
Typology
Thermoelectrically Cooled InGaAs-InAs Photodiodes
|
Peak sens. wavelenght (nm)
1600
|
Responsivity (mA/W) @λ(nm)
1000 @ 1550
|
Sensitive Area (mm)
0.86 x 0.86
|
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|
Discontinued
|
KPDS100-H54P Photodevices for Sensors - Detectors, Thermoelectrically Cooled InGaAs-InAs Photodiodes, Kyosemi |
Package
TO-5, hermetic seal, TE cooler
|
Typology
Thermoelectrically Cooled InGaAs-InAs Photodiodes
|
Peak sens. wavelenght (nm)
3300
|
Responsivity (mA/W) @λ(nm)
1200 @ 3300
|
Sensitive Area (mm)
1.00 x 1.00
|