Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Characteristics | Typical Dark Current | Package | Sensitive Area (µmɸ) | Typology | Half Angle (deg) | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (µA) |
|---|---|---|---|---|---|---|---|---|---|---|
|
KPDE008-S Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Cap Isolated 2-pin Mini Can InGaAs PD |
Characteristics
Mini can
|
Typical Dark Current
160pA (max) @ 5V
|
Package
Mini can
|
Sensitive Area (µmɸ)
80
|
Typology
InGaAs Photodiodes
|
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|
KPDE020-S Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Cap Isolated 2-pin Mini Can InGaAs PD |
Characteristics
Mini can
|
Typical Dark Current
400pA (max) @ 5V
|
Package
Mini can
|
Sensitive Area (µmɸ)
200
|
Typology
InGaAs Photodiodes
|
||||
|
KPDE030-S Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Cap Isolated 2-pin Mini Can InGaAs PD |
Characteristics
Mini can
|
Typical Dark Current
600pA (max) @ 5V
|
Package
Mini can
|
Sensitive Area (µmɸ)
300
|
Typology
InGaAs Photodiodes
|
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|
Discontinued
|
KPD3065C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Package
ϕ 6,5 ceramic, epoxy lens
|
Typology
Silicon Photodiodes
|
Half Angle (deg)
120
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
2.59 x 2.59
|
Short circuit current (µA)
70
|