Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Characteristics | Typical Dark Current | Package | Sensitive Area (µmɸ) | Typology |
|---|---|---|---|---|---|---|
|
KPDEA005-56F Kyosemi, Optical Communication Devices, InGaAs Avalanche Photodiodes, |
Characteristics
APD
|
Typical Dark Current
10nA
|
Package
Hermetic sealed
|
Sensitive Area (µmɸ)
55
|
Typology
InGaAs Avalanche Photodiodes
|
|
KPDEA007-56F Kyosemi, Optical Communication Devices, InGaAs Avalanche Photodiodes, InGaAs Avalanche Photodiodes |
Characteristics
APD
|
Typical Dark Current
15nA
|
Package
Hermetic sealed
|
Sensitive Area (µmɸ)
75
|
Typology
InGaAs Avalanche Photodiodes
|
|
KPEIMC-100 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Characteristics
Edge illuminated
|
Typical Dark Current
35pA @ 5V
|
Package
Chip
|
Sensitive Area (µmɸ)
80x100
|
Typology
InGaAs Photodiodes
|
|
KPEIMC-UDCOM Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Characteristics
Edge illuminated
|
Typical Dark Current
50pA @ 5V
|
Package
Chip
|
Sensitive Area (µmɸ)
100x120
|
Typology
InGaAs Photodiodes
|