Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Chip Material | Half Angle (deg) | Wavelength (nm) | Package | Output Power @lf(mA) | Typology | Output Power (mW) | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (µA) |
|---|---|---|---|---|---|---|---|---|---|---|---|
|
Discontinued
|
KED085-P01 Kyosemi, Photodevices for Sensors - Emitters, GaAIAs Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
130
|
Wavelength (nm)
850
|
Package
Surface mount
|
Output Power @lf(mA)
1000
|
Typology
Infrared LEDs
|
||||
|
Discontinued
|
KED405UMS1 Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led, InGaN Violet LED |
Chip Material
InGaN
|
Half Angle (deg)
130
|
Wavelength (nm)
405
|
Package
Surface mount, ceramic
|
Output Power @lf(mA)
20
|
Typology
Ultra Violet LEDs
|
Output Power (mW)
13
|
|||
|
Discontinued
|
KED880S4 Kyosemi, Photodevices for Sensors - Emitters, GaAIAs Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
130
|
Wavelength (nm)
880
|
Package
Side view compact package
|
Output Power @lf(mA)
20
|
Typology
Infrared LEDs
|
Output Power (mW)
2.5
|
|||
|
Discontinued
|
KPD151M53 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
130
|
Package
ϕ5 plastic mold
|
Typology
Silicon Photodiodes
|
Peak sens. wavelenght (nm)
850
|
Sensitive Area (mm)
1.25 x 1.25
|
Short circuit current (µA)
16
|