Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Dimension | Half Angle (deg) | Wavelength | Package | Output Power (mW) | Operating temperature | Typical Direct Voltage (V) | Typology | Chip Material | Wavelength (nm) | Output Power @lf(mA) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NSxxxL-3SVR Nitride Semiconductor - LED UV |
Dimension
3.5 x 3.5 x 2.0
|
Half Angle (deg)
120
|
Wavelength
380-390 nm
390-400 nm
400-410 nm
|
Package
Surface mount
|
Output Power (mW)
1200
1100
|
Operating temperature
-10 ~ +85 °C
|
Typical Direct Voltage (V)
3.6
3.5
|
Typology
Ultra Violet LEDs
|
|||
|
KED050CXK Kyosemi, Photodevices for Sensors - Emitters, Point Source LED, Point-source Infrared LED |
Half Angle (deg)
125
|
Package
TO-46, epoxy lens
|
Output Power (mW)
5
|
Typology
Point Source LEDs
|
Chip Material
GaAIAs
|
Wavelength (nm)
850
|
Output Power @lf(mA)
50
|
||||
|
Discontinued
|
KED405UH3 Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led, InGaN Ultraviolet LED |
Half Angle (deg)
100
|
Package
TO-18, hermetic seal
|
Output Power (mW)
5
|
Typology
Ultra Violet LEDs
|
Chip Material
InGaN
|
Wavelength (nm)
405
|
Output Power @lf(mA)
20
|