Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Dimension | Half Angle (deg) | Wavelength | Package | Output Power (mW) | Operating temperature | Typical Direct Voltage (V) | Typology | Chip Material | Wavelength (nm) | Output Power @lf(mA) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NSxxxL-3SVT Nitride Semiconductor - LED UV |
Dimension
3.5 x 3.5 x 2.8
|
Half Angle (deg)
45
|
Wavelength
380-390 nm
390-400 nm
400-410 nm
|
Package
Surface mount
|
Output Power (mW)
1100
1050
|
Operating temperature
-10 ~ +85 °C
|
Typical Direct Voltage (V)
3.6
3.5
|
Typology
Ultra Violet LEDs
|
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|
NSxxxL-6D4G Nitride Semiconductor - Deep UV LED |
Dimension
6.3 x 6.3 x 1.8
|
Half Angle (deg)
116
|
Wavelength
270-280 nm
305-315 nm
|
Package
Surface mount
|
Output Power (mW)
13.0
6.8
|
Operating temperature
-30 ~ +60 °C
|
Typical Direct Voltage (V)
6.5
5.5
|
Typology
Ultra Violet LEDs
|
|||
|
NSxxxL-7SMG Nitride Semiconductor - UV LED |
Dimension
6.8 x 6.8 x 1.0
|
Half Angle (deg)
115
|
Wavelength
360-370 nm
380-390 nm
400-410 nm
390-400 nm
|
Package
Surface mount
|
Output Power (mW)
3800
3500
|
Operating temperature
-10 ~ +85 °C
|
Typical Direct Voltage (V)
4.0
3.5
|
Typology
Ultra Violet LEDs
|
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|
KED365UH Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led |
Half Angle (deg)
16
|
Package
TO-18, hermetic seal
|
Output Power (mW)
0.7
|
Typology
Ultra Violet LEDs
|
Chip Material
GaN
|
Wavelength (nm)
367
|
Output Power @lf(mA)
20
|
||||
|
KED372UH Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led, InGaN Ultraviolet LED |
Half Angle (deg)
12
|
Package
TO-18, hermetic seal
|
Output Power (mW)
1.5
|
Typology
Ultra Violet LEDs
|
Chip Material
InGaN
|
Wavelength (nm)
373
|
Output Power @lf(mA)
20
|
||||
|
|
KED372UHB Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led, InGaN Ultraviolet LED |
Half Angle (deg)
12
|
Package
TO-18, hermetic seal
|
Output Power (mW)
7.2
|
Typology
Ultra Violet LEDs
|
Chip Material
InGaN
|
Wavelength (nm)
378
|
Output Power @lf(mA)
20
|
||||
|
KED373UH Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led, InGaN Ultraviolet LED |
Half Angle (deg)
100
|
Package
TO-18, hermetic seal
|
Output Power (mW)
1.5
|
Typology
Ultra Violet LEDs
|
Chip Material
InGaN
|
Wavelength (nm)
373
|
Output Power @lf(mA)
20
|
||||
|
KED378UH Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led, InGaN Ultraviolet LED |
Half Angle (deg)
10
|
Package
TO-46, hermetic seal
|
Output Power (mW)
1
|
Typology
Ultra Violet LEDs
|
Chip Material
InGaN
|
Wavelength (nm)
373
|
Output Power @lf(mA)
20
|
||||
|
Discontinued
|
KED365US1 Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led |
Half Angle (deg)
100
|
Package
Surface mount, ceramic
|
Output Power (mW)
2.1
|
Typology
Ultra Violet LEDs
|
Chip Material
GaN
|
Wavelength (nm)
367
|
Output Power @lf(mA)
20
|
||||
|
Discontinued
|
KED373US1 Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led, InGaN GaN UV LED |
Half Angle (deg)
100
|
Package
Surface mount, ceramic
|
Output Power (mW)
1.3
|
Typology
Ultra Violet LEDs
|
Chip Material
InGaN
|
Wavelength (nm)
373
|
Output Power @lf(mA)
20
|