LED
LED
| Product | Description | Chip Material | Wavelength (nm) | Package | Output Power @lf(mA) | Output Power (mW) | Typology | Half Angle (deg) |
|---|---|---|---|---|---|---|---|---|
|
KED050CX-T Kyosemi, Photodevices for Sensors - Emitters, Point Source LED, Infrared LED Pigtail |
Chip Material
GaAIAs
|
Wavelength (nm)
850
|
Package
Pigtail
|
Output Power @lf(mA)
50
|
Output Power (mW)
-16(dBm)
|
Typology
Point Source LEDs
|
|
|
KED050CXH Kyosemi, Photodevices for Sensors - Emitters, Point Source LED, Point-source Infrared LED |
Chip Material
GaAIAs
|
Wavelength (nm)
850
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
2.4
|
Typology
Point Source LEDs
|
Half Angle (deg)
115
|
|
KED050CXK Kyosemi, Photodevices for Sensors - Emitters, Point Source LED, Point-source Infrared LED |
Chip Material
GaAIAs
|
Wavelength (nm)
850
|
Package
TO-46, epoxy lens
|
Output Power @lf(mA)
50
|
Output Power (mW)
5
|
Typology
Point Source LEDs
|
Half Angle (deg)
125
|
|
KED080RAXH Kyosemi, Photodevices for Sensors - Emitters, Point Source LED |
Chip Material
AIGaInP
|
Wavelength (nm)
650
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
0.6
|
Typology
Point Source LEDs
|
Half Angle (deg)
115
|
|
KED160RAXH Kyosemi, Photodevices for Sensors - Emitters, Point Source LED |
Chip Material
AIGaInP
|
Wavelength (nm)
650
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
0.8
|
Typology
Point Source LEDs
|
Half Angle (deg)
115
|
|
KED351HDL Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED |
Chip Material
GaAIAs
|
Wavelength (nm)
870
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
4
|
Typology
Infrared LEDs
|
Half Angle (deg)
12
|
|
KED353KDL Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED |
Chip Material
GaAIAs
|
Wavelength (nm)
870
|
Package
TO-18, epoxy lens
|
Output Power @lf(mA)
20
|
Output Power (mW)
6
|
Typology
Infrared LEDs
|
Half Angle (deg)
42
|
|
KED601H Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED |
Chip Material
GaAIAs
|
Wavelength (nm)
890
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
100
|
Output Power (mW)
9
|
Typology
Infrared LEDs
|
Half Angle (deg)
14
|
|
KED602K Kyosemi, Photodevices for Sensors - Emitters, Infrared LED |
Chip Material
GaAIAs
|
Wavelength (nm)
890
|
Package
TO-18, epoxy lens
|
Output Power @lf(mA)
50
|
Output Power (mW)
15
|
Typology
Infrared LEDs
|
Half Angle (deg)
45
|
|
|
KED604H Kyosemi, Photodevices for Sensors - Emitters, Infrared LED |
Chip Material
GaAIAs
|
Wavelength (nm)
890
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
100
|
Output Power (mW)
11
|
Typology
Infrared LEDs
|
Half Angle (deg)
60
|