LED
LED
| Product | Description | Chip Material | Half Angle (deg) | Wavelength (nm) | Package | Output Power @lf(mA) | Output Power (mW) | Typology |
|---|---|---|---|---|---|---|---|---|
|
KED080RAXH Kyosemi, Photodevices for Sensors - Emitters, Point Source LED |
Chip Material
AIGaInP
|
Half Angle (deg)
115
|
Wavelength (nm)
650
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
0.6
|
Typology
Point Source LEDs
|
|
KED160RAXH Kyosemi, Photodevices for Sensors - Emitters, Point Source LED |
Chip Material
AIGaInP
|
Half Angle (deg)
115
|
Wavelength (nm)
650
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
0.8
|
Typology
Point Source LEDs
|
|
KEDE1304H Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED |
Chip Material
InGaAsP
|
Half Angle (deg)
80
|
Wavelength (nm)
1300
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
2.5
|
Typology
Infrared LEDs
|
|
KEDE1452H Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED |
Chip Material
InGaAsP
|
Half Angle (deg)
20
|
Wavelength (nm)
1450
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
2.8
|
Typology
Infrared LEDs
|
|
KEDE1454H Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED |
Chip Material
InGaAsP
|
Half Angle (deg)
80
|
Wavelength (nm)
1450
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
2.5
|
Typology
Infrared LEDs
|
|
KEDE1552H Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED |
Chip Material
InGaAsP
|
Half Angle (deg)
20
|
Wavelength (nm)
1550
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
1.8
|
Typology
Infrared LEDs
|
|
KEDE1652H Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED |
Chip Material
InGaAsP
|
Half Angle (deg)
20
|
Wavelength (nm)
1650
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
2
|
Typology
Infrared LEDs
|
|
Discontinued
|
KED501C Kyosemi, Photodevices for Sensors - Emitters, GaAs Infrared LED |
Chip Material
GaAs
|
Half Angle (deg)
170
|
Wavelength (nm)
950
|
Package
ϕ3 ceramic, epoxy lens
|
Output Power @lf(mA)
40
|
Output Power (mW)
4.5
|
Typology
Infrared LEDs
|
|
Discontinued
|
KED501H Kyosemi, Photodevices for Sensors - Emitters, Gas Infrared LED |
Chip Material
GaAs
|
Half Angle (deg)
12
|
Wavelength (nm)
950
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
100
|
Output Power (mW)
7.2
|
Typology
Infrared LEDs
|
|
Discontinued
|
KED503K Kyosemi, Photodevices for Sensors - Emitters, Infrared LED |
Chip Material
GaAs
|
Half Angle (deg)
75
|
Wavelength (nm)
950
|
Package
TO-18, epoxy lens
|
Output Power @lf(mA)
50
|
Output Power (mW)
10
|
Typology
Infrared LEDs
|