LED
LED
| Product | Description | Chip Material | Half Angle (deg) | Wavelength (nm) | Package | Output Power @lf(mA) | Output Power (mW) | Typology | Colour | Resin colour | External Diameter | Light intensity (mcd) | Max Direct Voltage (V) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
KED080RAXH Kyosemi, Photodevices for Sensors - Emitters, Point Source LED |
Chip Material
AIGaInP
|
Half Angle (deg)
115
|
Wavelength (nm)
650
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
0.6
|
Typology
Point Source LEDs
|
|||||
|
KED160RAXH Kyosemi, Photodevices for Sensors - Emitters, Point Source LED |
Chip Material
AIGaInP
|
Half Angle (deg)
115
|
Wavelength (nm)
650
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
0.8
|
Typology
Point Source LEDs
|
|||||
|
KED365UH Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led |
Chip Material
GaN
|
Half Angle (deg)
16
|
Wavelength (nm)
367
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
0.7
|
Typology
Ultra Violet LEDs
|
|||||
|
KEDE1304H Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED |
Chip Material
InGaAsP
|
Half Angle (deg)
80
|
Wavelength (nm)
1300
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
2.5
|
Typology
Infrared LEDs
|
|||||
|
KEDE1452H Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED |
Chip Material
InGaAsP
|
Half Angle (deg)
20
|
Wavelength (nm)
1450
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
2.8
|
Typology
Infrared LEDs
|
|||||
|
KEDE1454H Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED |
Chip Material
InGaAsP
|
Half Angle (deg)
80
|
Wavelength (nm)
1450
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
2.5
|
Typology
Infrared LEDs
|
|||||
|
KEDE1552H Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED |
Chip Material
InGaAsP
|
Half Angle (deg)
20
|
Wavelength (nm)
1550
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
1.8
|
Typology
Infrared LEDs
|
|||||
|
KEDE1652H Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED |
Chip Material
InGaAsP
|
Half Angle (deg)
20
|
Wavelength (nm)
1650
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
2
|
Typology
Infrared LEDs
|
|||||
|
Discontinued
|
KED365US1 Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led |
Chip Material
GaN
|
Half Angle (deg)
100
|
Wavelength (nm)
367
|
Package
Surface mount, ceramic
|
Output Power @lf(mA)
20
|
Output Power (mW)
2.1
|
Typology
Ultra Violet LEDs
|
|||||
|
Discontinued
|
KED571M32 Kyosemi, Photodevices for Sensors - Emitters, Plastic Mold LEDs for sensors, Yellow Green color, Kyosemi Photodevices for sensors |
Chip Material
AIGaInP
|
Half Angle (deg)
80
|
Wavelength (nm)
570
|
Package
M32
|
Output Power @lf(mA)
20
|
Output Power (mW)
0.5
|
Typology
Plastic Mold LEDs for Sensors
|
Colour
Yellow Green
|
Resin colour
Clear
|
External Diameter
⌀3
|
Light intensity (mcd)
150
|
Max Direct Voltage (V)
2.4
|