LED
LED
| Product | Description | Chip Material | Half Angle (deg) | Wavelength (nm) | Package | Output Power @lf(mA) | Output Power (mW) | Typology |
|---|---|---|---|---|---|---|---|---|
|
KED351RKD Kyosemi, Photodevices for Sensors - Emitters, GaAIAs Red LED |
Chip Material
GaAIAs
|
Half Angle (deg)
32
|
Wavelength (nm)
660
|
Package
TO-18, epoxy lens
|
Output Power @lf(mA)
20
|
Output Power (mW)
3.6
|
Typology
Red LEDs
|
|
KED353KDL Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
42
|
Wavelength (nm)
870
|
Package
TO-18, epoxy lens
|
Output Power @lf(mA)
20
|
Output Power (mW)
6
|
Typology
Infrared LEDs
|
|
KED354RHD Kyosemi, Photodevices for Sensors - Emitters, GaAIAs Red LED |
Chip Material
GaAIAs
|
Half Angle (deg)
45
|
Wavelength (nm)
660
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
3
|
Typology
Red LEDs
|
|
KED358HQ-N Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs High Power Infrare LED |
Chip Material
GaAIAs
|
Half Angle (deg)
11
|
Wavelength (nm)
890
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
3
|
Typology
Parallel Beam LEds
|
|
KED358RHDQ Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs Red LED |
Chip Material
GaAIAs
|
Half Angle (deg)
11
|
Wavelength (nm)
660
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
2
|
Typology
Parallel Beam LEds
|
|
KED530HDB Multi-wavelenght LED |
Chip Material
GaAIAs
|
Half Angle (deg)
60
|
Wavelength (nm)
660
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
4
|
Typology
Multi Wavelenght LEDs
|
|
KED601H Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
14
|
Wavelength (nm)
890
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
100
|
Output Power (mW)
9
|
Typology
Infrared LEDs
|
|
KED602K Kyosemi, Photodevices for Sensors - Emitters, Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
45
|
Wavelength (nm)
890
|
Package
TO-18, epoxy lens
|
Output Power @lf(mA)
50
|
Output Power (mW)
15
|
Typology
Infrared LEDs
|
|
|
KED604H Kyosemi, Photodevices for Sensors - Emitters, Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
60
|
Wavelength (nm)
890
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
100
|
Output Power (mW)
11
|
Typology
Infrared LEDs
|
|
Discontinued
|
KED080DXH Kyosemi, Photodevices for Sensors - Emitters, Point Source LED, Point-source Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
110
|
Wavelength (nm)
850
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
1.0
|
Typology
Point Source LEDs
|