LED
LED
| Product | Description | Dimension | Wavelength | Package | Output Power (mW) | Typical Direct Voltage (V) | Typology | Chip Material | Half Angle (deg) | Wavelength (nm) | Output Power @lf(mA) |
|---|---|---|---|---|---|---|---|---|---|---|---|
|
NS275B-44FA Nitride Semiconductor - Deep UV LED |
Dimension
20 x 20 x 4
|
Wavelength
270-280 nm
|
Package
Chip on board
|
Output Power (mW)
290
|
Typical Direct Voltage (V)
31
|
Typology
Ultra Violet LEDs
|
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|
NS310M-88IG Nitride Semiconductor - Deep UV LED |
Dimension
45 x 45 x 4
|
Wavelength
310 nm
|
Package
Chip on board
|
Output Power (mW)
70
|
Typical Direct Voltage (V)
48
|
Typology
Ultra Violet LEDs
|
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|
KED050CXH Kyosemi, Photodevices for Sensors - Emitters, Point Source LED, Point-source Infrared LED |
Package
TO-46, hermetic seal
|
Output Power (mW)
2.4
|
Typology
Point Source LEDs
|
Chip Material
GaAIAs
|
Half Angle (deg)
115
|
Wavelength (nm)
850
|
Output Power @lf(mA)
50
|
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|
KED050HQ Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs Parallel Beam Infrared LED |
Package
TO-46, hermetic seal
|
Output Power (mW)
2.4
|
Typology
Parallel Beam LEds
|
Chip Material
GaAIAs
|
Half Angle (deg)
7.5
|
Wavelength (nm)
850
|
Output Power @lf(mA)
50
|
|||
|
KED050HV Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs Parallel Beam Infrared LED |
Package
TO-46, hermetic seal
|
Output Power (mW)
2
|
Typology
Parallel Beam LEds
|
Chip Material
GaAIAs
|
Half Angle (deg)
6
|
Wavelength (nm)
850
|
Output Power @lf(mA)
50
|
|||
|
KED080RAXH Kyosemi, Photodevices for Sensors - Emitters, Point Source LED |
Package
TO-46, hermetic seal
|
Output Power (mW)
0.6
|
Typology
Point Source LEDs
|
Chip Material
AIGaInP
|
Half Angle (deg)
115
|
Wavelength (nm)
650
|
Output Power @lf(mA)
20
|
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|
KED109Z-N Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs High Power Infrare LED |
Package
TO-46, hermetic seal
|
Output Power (mW)
3
|
Typology
Parallel Beam LEds
|
Chip Material
GaAIAs
|
Half Angle (deg)
18
|
Wavelength (nm)
890
|
Output Power @lf(mA)
20
|
|||
|
KED160RAXH Kyosemi, Photodevices for Sensors - Emitters, Point Source LED |
Package
TO-46, hermetic seal
|
Output Power (mW)
0.8
|
Typology
Point Source LEDs
|
Chip Material
AIGaInP
|
Half Angle (deg)
115
|
Wavelength (nm)
650
|
Output Power @lf(mA)
20
|
|||
|
KED308HQ Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs Parallel Beam Infrared LED |
Package
TO-46, hermetic seal
|
Output Power (mW)
12
|
Typology
Parallel Beam LEds
|
Chip Material
GaAIAs
|
Half Angle (deg)
12
|
Wavelength (nm)
870
|
Output Power @lf(mA)
50
|
|||
|
KED308HV Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs Parallel Beam Infrared LED |
Package
TO-46, hermetic seal
|
Output Power (mW)
7
|
Typology
Parallel Beam LEds
|
Chip Material
GaAIAs
|
Half Angle (deg)
8
|
Wavelength (nm)
870
|
Output Power @lf(mA)
50
|