Photodiodes - Phototransistors
Photodiodes - Phototransistors
| Product | Description | Characteristics | Typical Dark Current | Package | Sensitive Area (µmɸ) | Typology | Half Angle (deg) | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (µA) |
|---|---|---|---|---|---|---|---|---|---|---|
|
KPDE10GC-V2 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, 10Gbps InGaAs photodiode |
Characteristics
High speed
|
Typical Dark Current
10pA @ 5V
|
Package
Chip
|
Sensitive Area (µmɸ)
28
|
Typology
InGaAs Photodiodes
|
||||
|
KPEIMC-100 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Characteristics
Edge illuminated
|
Typical Dark Current
35pA @ 5V
|
Package
Chip
|
Sensitive Area (µmɸ)
80x100
|
Typology
InGaAs Photodiodes
|
||||
|
KPEIMC-UDCOM Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Characteristics
Edge illuminated
|
Typical Dark Current
50pA @ 5V
|
Package
Chip
|
Sensitive Area (µmɸ)
100x120
|
Typology
InGaAs Photodiodes
|
||||
|
KPID150HC Kyosemi, Optical Communication Devices, Si High Speed & High Responsivity Photodiode |
Characteristics
Si high speed
|
Typical Dark Current
0.8nA @ 10V
|
Package
Chip
|
Sensitive Area (µmɸ)
1500
|
Typology
Si PIN Photodiodes
|
||||
|
Discontinued
|
KPD3065C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Package
ϕ 6,5 ceramic, epoxy lens
|
Typology
Silicon Photodiodes
|
Half Angle (deg)
120
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
2.59 x 2.59
|
Short circuit current (µA)
70
|
|||
|
Discontinued
|
KPDE005HAn Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Characteristics
Array
|
Typical Dark Current
30pA @ 5V
|
Package
Chip
|
Sensitive Area (µmɸ)
50
|
Typology
InGaAs Photodiodes
|
||||
|
Discontinued
|
KPDEH16C Optical Communication Devices, InGaAs Photodiodes, 25GHz InGaAs photodiode |
Characteristics
High speed
|
Typical Dark Current
0.5nA @ 2V
|
Package
Chip
|
Sensitive Area (µmɸ)
16
|
Typology
InGaAs Photodiodes
|
||||
|
Discontinued
|
KPDEH16DC Optical Communication Devices, InGaAs Photodiodes, 25GHz InGaAs photodiode |
Characteristics
High speed
|
Typical Dark Current
0.5nA @ 2V
|
Package
Chip
|
Sensitive Area (µmɸ)
16
|
Typology
InGaAs Photodiodes
|
||||
|
Discontinued
|
KPDEH16QC Kyosemi, Optical Communication Devices, InGaAs Photodiodes |
Characteristics
High speed
|
Typical Dark Current
0.5nA @ 2V
|
Package
Chip
|
Sensitive Area (µmɸ)
16
|
Typology
InGaAs Photodiodes
|
||||
|
Discontinued
|
KPDEH16DLC Kyosemi, Optical Communication Devices, InGaAs Photodiodes |
Characteristics
High speed
|
Typical Dark Current
0.5nA @ 2V
|
Package
Chip
|
Sensitive Area (µmɸ)
16
|
Typology
InGaAs Photodiodes
|