Photodiodes - Phototransistors | Tecnosens S.p.a.

Photodiodes - Phototransistors

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Product	Description	Characteristics	Typical Dark Current	Package	Sensitive Area (µmɸ)	Typology	Half Angle (deg)	Peak sens. wavelenght (nm)	Sensitive Area (mm)	Short circuit current (µA)	Photo Current Vce = 5 V
Add to comparison	KPDE008-S Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Cap Isolated 2-pin Mini Can InGaAs PD	Characteristics Mini can	Typical Dark Current 160pA (max) @ 5V	Package Mini can	Sensitive Area (µmɸ) 80	Typology InGaAs Photodiodes
Add to comparison	KPDE020-S Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Cap Isolated 2-pin Mini Can InGaAs PD	Characteristics Mini can	Typical Dark Current 400pA (max) @ 5V	Package Mini can	Sensitive Area (µmɸ) 200	Typology InGaAs Photodiodes
Add to comparison	KPDE030-S Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Cap Isolated 2-pin Mini Can InGaAs PD	Characteristics Mini can	Typical Dark Current 600pA (max) @ 5V	Package Mini can	Sensitive Area (µmɸ) 300	Typology InGaAs Photodiodes
Discontinued Add to comparison	KPD101M31 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi			Package ϕ3 plastic mold		Typology Silicon Photodiodes	Half Angle (deg) 60	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 0.81 x 0.81	Short circuit current (µA) 30
Discontinued Add to comparison	KPD101M32 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi			Package ϕ3 plastic mold		Typology Silicon Photodiodes	Half Angle (deg) 90	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 0.81 x 0.81	Short circuit current (µA) 16
Discontinued Add to comparison	KPD104M32 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi			Package ϕ3 plastic mold		Typology Silicon Photodiodes	Half Angle (deg) 70	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 0.81 x 0.81	Short circuit current (µA) 10
Discontinued Add to comparison	KPT081M31 Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi			Package ϕ3 plastic mold		Typology Silicon Phototransistors	Half Angle (deg) 60	Peak sens. wavelenght (nm) 800	Sensitive Area (mm) 0.64 x 0.64		Photo Current Vce = 5 V 7 (mA) 1000 (lx)
Discontinued Add to comparison	KPT081M32 Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi			Package ϕ3 plastic mold		Typology Silicon Phototransistors	Half Angle (deg) 90	Peak sens. wavelenght (nm) 800	Sensitive Area (mm) 0.64 x 0.64		Photo Current Vce = 5 V 4 (mA) 1000 (lx)